公开(公告)号：JP2000277745A

公开(公告)日：2000-10-06

申请号：JP2000069146

申请日：2000-03-13

Applicant: IBM

Inventor： KEVIN K CHAN ,  GUY M COEN ,  EUAN TOWER ,  HON-SAN P WAN

IPC: H01L21/336 ,  H01L21/762 ,  H01L29/423 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To obtain a method for forming a double-gate MOSFET structure in which the thickness of an oxide can be properly controlled and the upper and lower gate positions can be matched, and a structure for this. SOLUTION: This method for manufacturing a double-gate MOSFET structure comprises a step of forming a laminated structure having a monocrystal silicon channel layer 5 and an insulating oxide and nitride layer, a step of forming an opening in the laminated structure, a step for forming a source and drain region 9 in the opening, a step of removing the laminated structure part by part which is not covered with a mask, a step of removing the mask and the insulating oxide and nitride layer, and for leaving the channel layer 5 suspended from the source/drain region, a step of forming an oxide layer 11, and for covering the source/drain region and the channel layer, and a step for forming a double-gate conductor 12 on the oxide layer 11, so that a first conductor and a second conductor can be respectively included at the first side and second side of the channel layer 5.