公开(公告)号：JP2007017976A

公开(公告)日：2007-01-25

申请号：JP2006185110

申请日：2006-07-05

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HUANG WU-SONG S ,  TEMPLE KAREN ,  VARANASI PUSHKARA R

IPC: G03F7/11 ,  C08F28/06 ,  H01L21/027

CPC classification number: G03F7/094 ,  G06F17/5072

Abstract: PROBLEM TO BE SOLVED: To provide an underlayer composition compatible with a typical photoresist and having optical properties to be used as an ARC (antireflection coating).
SOLUTION: The composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The composition comprises a polymer containing a heterocyclic aromatic moiety. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The composition provides a planarizing underlayer having outstanding optical properties, mechanical properties, and etching selectivity properties. The present invention also encompasses a lithographic structure containing the underlayer prepared from the above composition, a method of making the lithographic structure, and a method of using the lithographic structure to pattern an underlying material layer on a substrate.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供与典型光致抗蚀剂相容并具有用作ARC（抗反射涂层）的光学性质的底层组合物。 公开了适用于多层光刻工艺中的平坦化底层的组合物。 组合物包含含有杂环芳族部分的聚合物。 另一方面，组合物还包含酸生成剂。 在另一方面，组合物还包含交联剂。 该组合物提供具有突出的光学性能，机械性能和蚀刻选择性的平坦化底层。 本发明还包括含有由上述组合物制备的底层的光刻结构，制备光刻结构的方法，以及使用该光刻结构在基底上图形化下层材料层的方法。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：WO2009091704A2

公开(公告)日：2009-07-23

申请号：PCT/US2009030792

申请日：2009-01-13

Applicant: IBM ,  LI WENJIE ,  HUANG WU-SONG S ,  VARANASI PUSHKARA R ,  LIU SEN ,  POPOVA IRENE Y

Inventor： LI WENJIE ,  HUANG WU-SONG S ,  VARANASI PUSHKARA R ,  LIU SEN ,  POPOVA IRENE Y

IPC: G03F7/004 ,  C07C317/14 ,  G03F7/26

CPC classification number: C07C309/59 ,  C07C25/18 ,  C07C309/40 ,  C07C381/12 ,  G03F7/0045 ,  G03F7/0397

Abstract: Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free aromatic sulfonate anionic component having one or more electron withdrawing groups. The photoacid generators preferably contain a fluorine-free onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer having a lactone functionality. The compositions are especially useful for forming material patterns using 193nm (ArF) imaging radiation.

Abstract translation: 含有无氟光致酸发生剂的无氟光致酸发生剂和光致抗蚀剂组合物可用作具有PFOS / PFAS光致酸产生剂的光致抗蚀剂的替代品。 光酸产生剂的特征在于存在具有一个或多个吸电子基团的无氟芳族磺酸盐阴离子组分。 光酸产生剂优选含有无氟鎓阳离子成分，更优选含有阳离子锍组分。 光致抗蚀剂组合物优选含有具有内酯官能度的酸敏感成像聚合物。 组合物特别适用于使用193nm（ArF）成像辐射形成材料图案。

公开(公告)号：WO2011031396A3

公开(公告)日：2011-06-30

申请号：PCT/US2010044630

申请日：2010-08-06

Applicant: IBM ,  GOLDFARB DARIO L ,  GLODDE MARTIN ,  HUANG WU-SONG S ,  LIU SEN ,  VYKLICKY LIBOR ,  LI WAI-KIN

Inventor： GOLDFARB DARIO L ,  GLODDE MARTIN ,  HUANG WU-SONG S ,  LIU SEN ,  VYKLICKY LIBOR ,  LI WAI-KIN

IPC: C09D5/32 ,  G03F7/20 ,  H01L21/02

CPC classification number: G03F7/0388 ,  G03F7/038 ,  G03F7/091 ,  G03F7/11 ,  H01L51/447

Abstract: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract translation: 一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：GB2525818A

公开(公告)日：2015-11-04

申请号：GB201515977

申请日：2014-01-23

Applicant: IBM ,  SHINETSU CHEMICAL CO

Inventor： GLODDE MARTIN ,  HUANG WU-SONG S ,  PEREZ JAVIER ,  SOORIYAKUMARAN RATNAM ,  KINSHO TAKESHI ,  OGIHARA TSUTOMU ,  TACHIBANA SEIICHIRO ,  UEDA TAKAFUMI

IPC: G03F7/11 ,  C09D5/00 ,  C09D183/00 ,  G03F7/075

Abstract: Embodiments include a silicon-containing antireflective material including a silicon- containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiOx background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides. Embodiments further include lithographic structures including an organic anti-reflective layer, the above-described silicon-containing anti-reflective layer above the organic anti-reflective layer, and a photoresist layer above the above-described silicon-containing anti-reflective layer. Embodiments further include a method of forming a lithographic structure utilizing the above-described silicon-containing anti- reflective layer.

公开(公告)号：GB2486102B

公开(公告)日：2015-10-28

申请号：GB201203634

申请日：2010-08-06

Applicant: IBM

Inventor： GOLDFARB DARIO L ,  GLODDE MARTIN ,  HUANG WU-SONG S ,  LIU SEN ,  VYKLICKY LIBOR ,  LI WAI-KIN

IPC: C09D5/32 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/02