公开(公告)号：EP2212905A4

公开(公告)日：2012-03-07

申请号：EP08852871

申请日：2008-11-11

Applicant: IBM

Inventor： HUANG WU-SONG ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO ,  LI WAI-KIN

IPC: G03F7/00 ,  G03F7/039 ,  G03F7/40 ,  H01L21/00

CPC classification number: G03F7/0048 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

公开(公告)号：EP2089909A4

公开(公告)日：2009-12-23

申请号：EP07844145

申请日：2007-10-11

Applicant: IBM

Inventor： LI WAI-KIN ,  YANG HAINING

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L29/42316 ,  H01L21/28097 ,  H01L21/28518 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78 ,  Y10S977/892

公开(公告)号：WO2010133422A3

公开(公告)日：2011-05-12

申请号：PCT/EP2010055412

申请日：2010-04-23

Applicant: IBM ,  IBM UK ,  CHENG JOY ,  NA YOUNG-HYE ,  LAI KAFAI ,  RETTNER CHARLES THOMAS ,  SANDERS DANIEL PAUL ,  LI WAI-KIN

Inventor： CHENG JOY ,  NA YOUNG-HYE ,  LAI KAFAI ,  RETTNER CHARLES THOMAS ,  SANDERS DANIEL PAUL ,  LI WAI-KIN

IPC: B81C1/00

CPC classification number: B81C1/00031 ,  B81C1/00404 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/31144

Abstract: An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

Abstract translation: 例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。 例如，开口的横截面可以由重叠的圆形区域给出。 侧壁在各个点处相邻，在那里它们限定突起。 将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。 在开口中形成离散的分离的区域，其被去除以形成孔，其可以被转移到下面的基底中。 这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。 分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。

公开(公告)号：WO2008055137A3

公开(公告)日：2008-08-14

申请号：PCT/US2007082967

申请日：2007-10-30

Applicant: IBM ,  CHEN KUANG-JUNG ,  HUANG WU-SONG ,  LI WAI-KIN ,  LIN YI-HSIUNG S

Inventor： CHEN KUANG-JUNG ,  HUANG WU-SONG ,  LI WAI-KIN ,  LIN YI-HSIUNG S

IPC: C08G18/66

CPC classification number: G03F7/0758 ,  G03F7/0045

Abstract: A resist polymer (22) that has nano-scale patterns of sub-lithographic openings (26) located therein that are oriented substantially perpendicular to its major surfaces is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material (12). After the transferring of the nano-scale patterns into the substrate, nano-scale openings having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.

Abstract translation: 提供了一种抗蚀剂聚合物（22），其具有位于其中的基本上垂直于其主表面取向的纳米级图案的亚光刻开口（26）。 具有纳米级图案的这种抗蚀剂聚合物被用作将纳米级图案转移到下面的基底例如介电材料（12）的蚀刻掩模。 在将纳米级图案转移到衬底中之后，在衬底中产生宽度小于50nm的纳米级开口。 介电材料中纳米级空隙的存在降低了原始介电材料的介电常数k。 根据本发明的一个方面，本发明的抗蚀剂聚合物包含共聚物，该共聚物包含含有含Si组分的第一单体单元（A）和含有有机组分的第二单体单元（B），其中所述 两个单体单元（A和B）具有不同的蚀刻速率。

公开(公告)号：JP2011225761A

公开(公告)日：2011-11-10

申请号：JP2010098464

申请日：2010-04-22

Applicant: Internatl Business Mach Corp ,  Shin-Etsu Chemical Co Ltd ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation ,  信越化学工業株式会社

Inventor： OHASHI MASAKI ,  TACHIBANA SEIICHIRO ,  NODA KAZUMI ,  SHIRAI SHOZO ,  KANAO GO ,  HUANG WU-SONG ,  GOLDFARB DARIO ,  LI WAI-KIN ,  GLODDE MARTIN

IPC: C09K3/00 ,  C09D5/32 ,  C09D7/12 ,  C09D163/00 ,  C09D171/00 ,  C09D201/00 ,  G03F7/11

CPC classification number: G03F7/0045 ,  G02B5/208 ,  G02B5/22 ,  G03F7/091 ,  G03F7/11

Abstract: PROBLEM TO BE SOLVED: To provide a material for forming a near-infrared absorptive film used in optical auto-focusing for enabling high-accuracy auto-focusing during an optical lithography process used in semiconductor fabrication, and to provide a laminate film comprising a near-infrared absorptive film which is formed by the above material, and a photoresist film.SOLUTION: The material for forming a near-infrared absorptive film contains (A) at least one near-infrared absorptive dye of formula (1) [wherein R1 and R2 are each a monovalent hydrocarbon group; k is an integer of 0 to 5; m is 0 or 1; n is 1 or 2; Z is O, S or C(R')(R"); R' and R" are each H or a monovalent hydrocarbon group; and Xis an anion], (B) at least one polymeric compound and (C) at least one solvent. By using for the optical lithography, the laminate film including the near-infrared absorptive film formed by the material and the photoresist film, the detection accuracy of optical auto-focusing is improved, the projected image of the optical lithography becomes clear, and a better photoresist pattern can be formed by improved contrast.

Abstract translation: 要解决的问题：提供一种用于形成用于光学自动聚焦的近红外吸收膜的材料，以在半导体制造中使用的光刻工艺期间实现高精度自动聚焦，并提供层压膜 包括由上述材料形成的近红外吸收膜和光致抗蚀剂膜。 解决方案：用于形成近红外吸收膜的材料包含（A）至少一种式（1）的近红外吸收染料[其中R 1和R 2各为一价烃基; k为0〜5的整数， m为0或1; n为1或2; Z是O，S或C（R'）（R“）; R'和R”各自为H或一价烃基; （B）至少一种聚合物和（C）至少一种溶剂。 通过使用光学平版印刷法，包含由该材料形成的近红外吸收膜和光致抗蚀剂膜的层压膜，光学自动聚焦的检测精度得到改善，光学平版印刷的投影图像变得清晰，并且更好 可以通过改善对比度形成光致抗蚀剂图案。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009010375A

公开(公告)日：2009-01-15

申请号：JP2008162938

申请日：2008-06-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHEN KUANG-JUNG ,  LI WAI-KIN ,  YANG HAINING S

IPC: H01L21/768 ,  H01L21/3065 ,  H01L23/522

CPC classification number: B81C1/00031 ,  B81B2203/0315 ,  B81C2201/0149 ,  B82Y30/00 ,  H01L21/31144 ,  H01L21/7682 ,  H01L2221/1047

Abstract: PROBLEM TO BE SOLVED: To provide a method of patterning a self-assembly nano-structure, and then forming a porous dielectric layer. SOLUTION: In one aspect, the method of patterning a self-assembly nano-structure and forming a porous dielectric includes a step of providing a hardmask layer over an underlying layer; a step of predefining an area with a photoresist layer on the hardmask layer that is to be protected during the patterning; a step of forming a copolymer layer over the hardmask layer and the photoresist layer; a step of forming the self-assembly nano-structure from the copolymer layer; and a step of etching to pattern the self-assembly nano-structure. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种图案化自组装纳米结构，然后形成多孔介电层的方法。 解决方案：一方面，图案化自组装纳米结构并形成多孔电介质的方法包括在下层上提供硬掩模层的步骤; 在图案化期间预定义要在被保护的硬掩模层上的光致抗蚀剂层的区域的步骤; 在硬掩模层和光致抗蚀剂层上形成共聚物层的步骤; 从共聚物层形成自组装纳米结构的步骤; 以及刻蚀自组装纳米结构的步骤。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：WO2012067755A2

公开(公告)日：2012-05-24

申请号：PCT/US2011057245

申请日：2011-10-21

Applicant: IBM ,  CHEN KUANG-JUNG ,  LIU SEN ,  HUANG WU-SONG ,  LI WAI-KIN

Inventor： CHEN KUANG-JUNG ,  LIU SEN ,  HUANG WU-SONG ,  LI WAI-KIN

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/32

CPC classification number: G03F7/325 ,  G03F7/0397

Abstract: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomelic unit having a pendant acid labile moiety and a second monomelic unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193nm (ArF) lithography.

Abstract translation: 本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括成像聚合物和辐射敏感酸产生剂。 成像聚合物包括具有侧酸不稳定部分的第一单体单元和包含反应性醚部分，异氰化物部分或异氰酸酯部分的第二单体单元。 图案形成方法利用有机溶剂显影剂选择性去除光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

公开(公告)号：WO2011022221A3

公开(公告)日：2011-06-30

申请号：PCT/US2010044631

申请日：2010-08-06

Applicant: IBM ,  HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

Inventor： HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

IPC: C09B67/10 ,  C08J5/18 ,  C08K5/17 ,  C08L63/00 ,  H01L21/02

CPC classification number: G03F7/091 ,  G03F9/7026

Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine -based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near- infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract translation: 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及含有固体近红外吸收膜的涂层的微电子基板以及在近红外线吸收膜位于微电子基板之间的情况下图案化涂布在微电子基板上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：WO2008094746A3

公开(公告)日：2008-10-09

申请号：PCT/US2008050973

申请日：2008-01-14

Applicant: IBM ,  LI WAI-KIN ,  YANG HAINING S

Inventor： LI WAI-KIN ,  YANG HAINING S

IPC: G03C5/00

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/76816 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90

Abstract: The present invention is directed to the formation of sublithographic features in a semi conduct or structure using self-assembling polymers The self-assembling polymers are formed in openings in a hard mask, annealed and then etched, followed by etching of the underlying dielectric material. At least one subiithograpliic feature is formed according to this method. Abo disclosed is an intermediate semiconductor structure in which at least one interconnect wiring feature has a dimension that is defined by a self-assembled block copolymer.

Abstract translation: 本发明涉及使用自组装聚合物在半导体或结构中形成亚光刻特征。将自组装聚合物形成在硬掩模的开口中，退火然后蚀刻，然后蚀刻下面的介电材料。 根据这种方法形成至少一个亚视觉特征。 Abo是一种中间半导体结构，其中至少一个互连布线特征具有由自组装嵌段共聚物限定的尺寸。

公开(公告)号：WO2013090529A1

公开(公告)日：2013-06-20

申请号：PCT/US2012069431

申请日：2012-12-13

Applicant: IBM

Inventor： GOLDFARB DARIO ,  GLODDE MARTIN ,  HUANG WU-SONG ,  KINSHO TAKESHI ,  LI WAI-KIN ,  NODA KAZUMI ,  OHASHI MASASKI ,  TACHIBANA SEIICHIRO

IPC: G03F7/004 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027

CPC classification number: G03F7/094 ,  G02B5/208 ,  G02B5/223 ,  G03F7/091 ,  G03F7/105 ,  G03F9/7026

Abstract: The present invention relates to a near-infrared (NIR) film composition for use in vertical alignment and correction in the patterning of integrated semiconductor wafers and a pattern forming method using the composition. The NIR absorbing film composition includes a NIR absorbing dye having a polymethine cation and a crosslinkable anion, a crosslinkable polymer and a crosslinking agent. The patterning forming method includes aligning and focusing a focal plane position of a photoresist layer by sensing near- infrared emissions reflected from a substrate containing the photoresist layer and a NIR absorbing layer formed from the NIR absorbing film composition under the photoresist layer. The NIR absorbing film composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate having complex buried topography.

Abstract translation: 本发明涉及用于集成半导体晶片的图案化的垂直取向和校正的近红外（NIR）膜组合物和使用该组合物的图案形成方法。 NIR吸收膜组合物包括具有聚甲炔阳离子和可交联阴离子的NIR吸收染料，可交联聚合物和交联剂。 图案形成方法包括通过感测从包含光致抗蚀剂层的基板反射的近红外发射和由光致抗蚀剂层下的NIR吸收膜组合物形成的NIR吸收层来对准和聚焦光致抗蚀剂层的焦平面位置。 近红外吸收膜组合物和图案形成方法对于在具有复杂掩埋形貌的半导体衬底上形成材料图案特别有用。