公开(公告)号：JP2011225761A

公开(公告)日：2011-11-10

申请号：JP2010098464

申请日：2010-04-22

Applicant: Internatl Business Mach Corp ,  Shin-Etsu Chemical Co Ltd ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation ,  信越化学工業株式会社

Inventor： OHASHI MASAKI ,  TACHIBANA SEIICHIRO ,  NODA KAZUMI ,  SHIRAI SHOZO ,  KANAO GO ,  HUANG WU-SONG ,  GOLDFARB DARIO ,  LI WAI-KIN ,  GLODDE MARTIN

IPC: C09K3/00 ,  C09D5/32 ,  C09D7/12 ,  C09D163/00 ,  C09D171/00 ,  C09D201/00 ,  G03F7/11

CPC classification number: G03F7/0045 ,  G02B5/208 ,  G02B5/22 ,  G03F7/091 ,  G03F7/11

Abstract: PROBLEM TO BE SOLVED: To provide a material for forming a near-infrared absorptive film used in optical auto-focusing for enabling high-accuracy auto-focusing during an optical lithography process used in semiconductor fabrication, and to provide a laminate film comprising a near-infrared absorptive film which is formed by the above material, and a photoresist film.SOLUTION: The material for forming a near-infrared absorptive film contains (A) at least one near-infrared absorptive dye of formula (1) [wherein R1 and R2 are each a monovalent hydrocarbon group; k is an integer of 0 to 5; m is 0 or 1; n is 1 or 2; Z is O, S or C(R')(R"); R' and R" are each H or a monovalent hydrocarbon group; and Xis an anion], (B) at least one polymeric compound and (C) at least one solvent. By using for the optical lithography, the laminate film including the near-infrared absorptive film formed by the material and the photoresist film, the detection accuracy of optical auto-focusing is improved, the projected image of the optical lithography becomes clear, and a better photoresist pattern can be formed by improved contrast.

Abstract translation: 要解决的问题：提供一种用于形成用于光学自动聚焦的近红外吸收膜的材料，以在半导体制造中使用的光刻工艺期间实现高精度自动聚焦，并提供层压膜 包括由上述材料形成的近红外吸收膜和光致抗蚀剂膜。 解决方案：用于形成近红外吸收膜的材料包含（A）至少一种式（1）的近红外吸收染料[其中R 1和R 2各为一价烃基; k为0〜5的整数， m为0或1; n为1或2; Z是O，S或C（R'）（R“）; R'和R”各自为H或一价烃基; （B）至少一种聚合物和（C）至少一种溶剂。 通过使用光学平版印刷法，包含由该材料形成的近红外吸收膜和光致抗蚀剂膜的层压膜，光学自动聚焦的检测精度得到改善，光学平版印刷的投影图像变得清晰，并且更好 可以通过改善对比度形成光致抗蚀剂图案。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：WO2011022221A3

公开(公告)日：2011-06-30

申请号：PCT/US2010044631

申请日：2010-08-06

Applicant: IBM ,  HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

Inventor： HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

IPC: C09B67/10 ,  C08J5/18 ,  C08K5/17 ,  C08L63/00 ,  H01L21/02

CPC classification number: G03F7/091 ,  G03F9/7026

Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine -based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near- infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract translation: 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及含有固体近红外吸收膜的涂层的微电子基板以及在近红外线吸收膜位于微电子基板之间的情况下图案化涂布在微电子基板上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：WO2009087027A3

公开(公告)日：2009-11-05

申请号：PCT/EP2008067717

申请日：2008-12-17

Applicant: IBM ,  GLODDE MARTIN ,  LIU SEN ,  POPOVA IRENE

Inventor： GLODDE MARTIN ,  LIU SEN ,  POPOVA IRENE

IPC: G03F7/004 ,  G03F7/039

CPC classification number: G03F7/0045 ,  G03F7/0392

Abstract: A photoacid generator compound P+ A-, comprises an antenna group P+ comprising a cation that generates protons upon interaction with light, and A- comprising a weakly coordinating peracceptor-substituted aromatic anion that does not contain fluorine or semi-metallic elements such as boron. In one embodiment, such anions comprise the following compounds 4, 5, 6 and 7, wherein E comprises an electron- withdrawing group and the removal of one proton generates aromaticity. P+ comprises an onium cation that decomposes into a proton and other components upon interaction with photons. P+ may comprise an organic chalcogen onium cation or a halonium cation, wherein the chalcogen onium cation in another embodiment may comprises an oxonium, sulfonium, selenium, tellurium, or onium cation, and the halonium cation may comprise an iodonium, chlorine or bromine onium cation. A novel compound comprises TPS CN5. A photolithographic formulation comprises the photoacid generator in combination with a photolithographic composition such as a photolithographic polymer. The formulation, when on a substrate, is exposed to optical lithographic radiation or ArF (193 nm) or KrF (248 nm) radiation, and developed. A product comprises an article of manufacture made by the method of the invention.

Abstract translation: 光酸产生剂化合物P + A-包含天线基团P +，所述天线基团P +包含在与光相互作用时产生质子的阳离子，和包含不包含氟或半金属元素如硼的弱配位的被取代基取代的芳族阴离子的A-。 在一个实施方案中，这样的阴离子包含以下化合物4,5,6和7，其中E包含吸电子基团并且去除一个质子产生芳香性。 P +包含鎓阳离子，其在与光子相互作用时分解成质子和其他组分。 P +可以包含有机硫属元素鎓阳离子或卤化鎓阳离子，其中在另一个实施方案中硫属元素鎓阳离子可以包含氧鎓，锍，硒，碲或鎓阳离子，并且所述卤鎓阳离子可以包含碘鎓，氯或溴鎓阳离子 。 一种新型化合物包含TPS CN5。 光刻制剂包含与光刻组合物例如光刻聚合物组合的光酸产生剂。 当在基材上时，该配方暴露于光学光刻辐射或ArF（193nm）或KrF（248nm）辐射下并显影。 产品包括通过本发明的方法制造的制品。

公开(公告)号：DE112014001478T5

公开(公告)日：2015-12-17

申请号：DE112014001478

申请日：2014-02-17

Applicant: IBM ,  SHINETSU CHEMICAL CO

Inventor： GLODDE MARTIN ,  PEREZ JAVIER J ,  KINSHO TAKESHI ,  OGIHARA TSUTOMU ,  WATANABE TAKERU ,  HUANG WU-SONG ,  TACHIBANA SEIICHIRO

IPC: C09D9/00 ,  C09D5/00 ,  C09D183/02 ,  G02B1/11

Abstract: Ein Silizium enthaltendes, antireflektierendes Beschichtung-(SiARC, Silicon-containing Antireflective Coating-)Material wird auf einem Substrat aufgetragen. Das SiARC-Material, das ein Basispolymer enthält, kann ein Bor-Silikat-Polymer enthalten, das Silsesquioxan enthält. Es wird eine Ätzfolge verwendet, die eine erste Nassätzung aufweist, wobei eine basische Lösung verwendet wird, eine zweite Nassätzung, wobei eine saure Lösung verwendet wird, und eine dritte Nassätzung, wobei eine andere basisches Lösung verwendet wird. Die erste Nassätzung kann dazu verwendet werden, das Bor-Silikat-Polymer aufzubrechen, und die zweite Nassätzung kann das Basispolymermaterial entfernen, und die dritte Nassätzung kann das restliche Bor-Silikat-Polymer und andere Restmaterialien entfernen. Das SiARC-Material kann von einem Substrat mittels der Ätzfolge entfernt werden, und das Substrat kann zu Monitoring-Zwecken wiederverwendet werden.

公开(公告)号：WO2014171984A3

公开(公告)日：2014-12-24

申请号：PCT/US2014012624

申请日：2014-01-23

Applicant: IBM ,  SHINETSU CHEMICAL CO

Inventor： GLODDE MARTIN ,  HUANG WU-SONG ,  PEREZ JAVIER ,  SOORIYAKUMARAN RATNAM ,  KINSHO TAKESHI ,  OGIHARA TSUTOMU ,  TACHIBANA SEIICHIRO ,  UEDA TAKAFUMI

IPC: G03F7/11 ,  C09D5/00 ,  C09D183/00 ,  G03F7/075

CPC classification number: G03F7/0757 ,  G03F7/0045 ,  G03F7/0751 ,  G03F7/0755 ,  G03F7/091 ,  G03F7/325

Abstract: Embodiments include a silicon-containing antireflective material including a silicon- containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiOx background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides. Embodiments further include lithographic structures including an organic anti-reflective layer, the above-described silicon-containing anti-reflective layer above the organic anti-reflective layer, and a photoresist layer above the above-described silicon-containing anti-reflective layer. Embodiments further include a method of forming a lithographic structure utilizing the above-described silicon-containing anti- reflective layer.

Abstract translation: 实施方案包括含硅的抗反射材料，其包含含硅基聚合物，非聚合倍半硅氧烷材料和光酸产生剂。 含硅基聚合物可以在SiOx背景上含有发色团部分，透明部分和反应性位点，其中x为约1至约2.示例性非聚合倍半硅氧烷材料包括具有与亲水性连接的酸不稳定侧基的多面体低聚倍半硅氧烷 示例性的酸不稳定侧基可以包括碳酸叔烷基酯，叔烷基酯，叔烷基醚，缩醛和缩酮。示例性亲水基团可以包括酚，醇，羧酸，酰胺和磺酰胺。 实施例还包括包括有机抗反射层，上述有机抗反射层上的含硅抗反射层和在上述含硅抗反射层上方的光致抗蚀剂层的光刻结构。 实施例还包括利用上述含硅抗反射层形成光刻结构的方法。

公开(公告)号：WO2013090529A1

公开(公告)日：2013-06-20

申请号：PCT/US2012069431

申请日：2012-12-13

Applicant: IBM

Inventor： GOLDFARB DARIO ,  GLODDE MARTIN ,  HUANG WU-SONG ,  KINSHO TAKESHI ,  LI WAI-KIN ,  NODA KAZUMI ,  OHASHI MASASKI ,  TACHIBANA SEIICHIRO

IPC: G03F7/004 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027

CPC classification number: G03F7/094 ,  G02B5/208 ,  G02B5/223 ,  G03F7/091 ,  G03F7/105 ,  G03F9/7026

Abstract: The present invention relates to a near-infrared (NIR) film composition for use in vertical alignment and correction in the patterning of integrated semiconductor wafers and a pattern forming method using the composition. The NIR absorbing film composition includes a NIR absorbing dye having a polymethine cation and a crosslinkable anion, a crosslinkable polymer and a crosslinking agent. The patterning forming method includes aligning and focusing a focal plane position of a photoresist layer by sensing near- infrared emissions reflected from a substrate containing the photoresist layer and a NIR absorbing layer formed from the NIR absorbing film composition under the photoresist layer. The NIR absorbing film composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate having complex buried topography.

Abstract translation: 本发明涉及用于集成半导体晶片的图案化的垂直取向和校正的近红外（NIR）膜组合物和使用该组合物的图案形成方法。 NIR吸收膜组合物包括具有聚甲炔阳离子和可交联阴离子的NIR吸收染料，可交联聚合物和交联剂。 图案形成方法包括通过感测从包含光致抗蚀剂层的基板反射的近红外发射和由光致抗蚀剂层下的NIR吸收膜组合物形成的NIR吸收层来对准和聚焦光致抗蚀剂层的焦平面位置。 近红外吸收膜组合物和图案形成方法对于在具有复杂掩埋形貌的半导体衬底上形成材料图案特别有用。

公开(公告)号：WO2011031396A3

公开(公告)日：2011-06-30

申请号：PCT/US2010044630

申请日：2010-08-06

Applicant: IBM ,  GOLDFARB DARIO L ,  GLODDE MARTIN ,  HUANG WU-SONG S ,  LIU SEN ,  VYKLICKY LIBOR ,  LI WAI-KIN

Inventor： GOLDFARB DARIO L ,  GLODDE MARTIN ,  HUANG WU-SONG S ,  LIU SEN ,  VYKLICKY LIBOR ,  LI WAI-KIN

IPC: C09D5/32 ,  G03F7/20 ,  H01L21/02

CPC classification number: G03F7/0388 ,  G03F7/038 ,  G03F7/091 ,  G03F7/11 ,  H01L51/447

Abstract: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract translation: 一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：GB2484880B

公开(公告)日：2012-09-26

申请号：GB201203472

申请日：2010-08-06

Applicant: IBM

Inventor： HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

IPC: G03F7/09 ,  G03F9/00

公开(公告)号：DE112010003326T5

公开(公告)日：2012-06-06

申请号：DE112010003326

申请日：2010-08-06

Applicant: IBM

Inventor： LIU SEN ,  GOLDFARB DARIO L ,  HUANG WU-SONG ,  LI WAI-KIN ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

IPC: C09B67/10 ,  C08J5/18 ,  C08K5/17 ,  C08L63/00 ,  H01L21/02

Abstract: Härtbare flüssige Formulierung, umfassend wenigstens (i) einen oder mehrere Nahinfrarot-absorbierende Farbstoffe auf Triphenylaminbasis, und (ii) ein oder mehrere Gießlösungsmittel. Die Erfindung betrifft auch Nahinfrarotabsorbierende Dünnschichten, die aus vernetzten Formen der härtbaren flüssigen Formulierung zusammengesetzt sind. Die Erfindung betrifft auch ein mikroelektronisches Substrat, das eine Schicht der festen, Nahinfrarot-absorbierenden Dünnschicht umfasst, und ein Verfahren zum Strukturieren einer Fotolackschicht, die auf ein mikroelektronisches Substrat geschichtet ist, falls die nahinfrarot-absorbierende Dünnschicht zwischen dem mikroelektronischen Substrat und einer Fotolack-Dünnschicht angeordnet ist.

公开(公告)号：GB2484880A

公开(公告)日：2012-04-25

申请号：GB201203472

申请日：2010-08-06

Applicant: IBM

Inventor： HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

IPC: G03F7/09 ,  G03F9/00

Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine -based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near- infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.