公开(公告)号：CA1066815A

公开(公告)日：1979-11-20

申请号：CA266780

申请日：1976-11-29

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  BROADIE ROBERT W ,  PLISKIN WILLIAM A

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/331 ,  H01L21/762 ,  H01L29/73

Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to the dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.

公开(公告)号：FR2289050A1

公开(公告)日：1976-05-21

申请号：FR7526334

申请日：1975-08-19

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  BROADIE ROBERT W ,  HULL EDWARD M ,  POGGE HANS B

IPC: H01L21/3063 ,  H01L21/223 ,  H01L21/306 ,  H01L21/316 ,  H01L21/331 ,  H01L29/04 ,  H01L29/08 ,  H01L29/73 ,  H01L21/18 ,  H01L29/36 ,  H01L29/68

Abstract: A high power semiconductor device is formed by providing a semiconductor substrate of N conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N substrates and at the same time eliminates the requirement of growing thick epitaxial layers.

公开(公告)号：FR2333349A1

公开(公告)日：1977-06-24

申请号：FR7629973

申请日：1976-09-30

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  BROADIE ROBERT W ,  PLISKIN WILLIAM A

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/331 ,  H01L21/762 ,  H01L29/73

Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to a dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.

公开(公告)号：FR2295568A1

公开(公告)日：1976-07-16

申请号：FR7532220

申请日：1975-10-13

Applicant: IBM

Inventor： BROADIE ROBERT W ,  KEMLAGE BERNARD M ,  POGGE HANS B

IPC: H01L21/205 ,  H01L33/00 ,  H01L21/36