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    Degenerate semiconductor member and device with at least two kinds of active impurity atoms
    5.
    发明授权
    Degenerate semiconductor member and device with at least two kinds of active impurity atoms 失效
    具有至少两种有源杂质原子的退化半导体元件和器件

    公开(公告)号：US3267339A

    公开(公告)日：1966-08-16

    申请号：US12108561

    申请日：1961-06-30

    Applicant: IBM

    Inventor： IM SAMUEL S

    IPC: H01L21/00 ,  H01L21/24 ,  H01L23/31 ,  H01L29/00 ,  H01L29/06 ,  H01L29/88

    CPC classification number: H01L29/06 ,  H01L21/00 ,  H01L21/24 ,  H01L23/31 ,  H01L24/05 ,  H01L24/48 ,  H01L29/00 ,  H01L29/88 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05559 ,  H01L2224/4847 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399

    Abstract: 996,152. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 30, 1962 [June 30, 1961], No. 20756/62. Heading H1K. A semi-conductor device includes a body of semi-conductor material containing at least two activators characteristic of the same conductivity type, the total amount of activator being sufficient to render the material degenerate and the relative proportions of the activators being such that the average radius of the activator atoms and the mean radius of the atoms of the semi-conductor are matched to within 3%. In a typical device a tunnel diode is constructed from a germanium wafer degenerately doped with arsenic and antimony atoms in a ratio between 3:1 and 10: 1 (3À5 to 1 providing exact matching). An insulating layer 11 (Fig. 1b of quartz or silicon monoxide is evaporated on the wafer through a mask and an electrode 12 consisting of at least 98% by weight indium, balance gallium sputtered or evaporated over it. The assembly is then heated to alloy the electrode to the wafer at 14 to form a tunnel PN junction. After thermo-compression bonding wire 15 to electrode 12 and attaching an electrode 16 the wafer is etched to the form shown as described in Specification 996,151, The matching of the average impurity atom diameter with that of the semi-conductor reduces the valley current of the diode, and the particular combination of antimony and aresenic as impurities reduces, eliminates or reverses the variation of the peak current with temperature according to the ratio of antimony to aresenic atoms used.

    Abstract translation: 996,152。 半导体器件。 国际商业机器公司 1962年5月30日[1961年6月30日]，第20756/62号。 标题H1K。 半导体器件包括半导体材料体，其包含至少两个具有相同导电类型的激活剂，活化剂的总量足以使材料退化，并且活化剂的相对比例使得平均半径 的激活原子和半导体的原子的平均半径匹配在3％以内。 在典型的器件中，隧道二极管由锗晶片构成，其中砷和锑原子以3：1和10：1之间的比例（3〜5比1提供精确匹配）。 绝缘层11（石英或一氧化硅的图1b）通过掩模和由至少98重量％的铟组成的电极12在晶片上蒸发，平衡镓溅射或蒸发，然后将该组件加热至合金 在14处形成晶片的电极以形成隧道PN结，在将热压接合线15连接到电极12并连接电极16之后，晶片被蚀刻成如规范996,151所述的形式。平均杂质原子的匹配 直径与半导体的直径减小了二极管的谷值电流，并且作为杂质的锑和砷的特定组合减少，消除或逆转峰值电流随温度的变化，根据锑与所用原子酸的比例。

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