公开(公告)号：CA1071941A

公开(公告)日：1980-02-19

申请号：CA258879

申请日：1976-08-11

Applicant: IBM

Inventor： IRENE EUGENE A ,  SILVESTRI VICTOR J ,  ZIRINSKY STANLEY

IPC: H01L27/112 ,  C23C16/22 ,  C23C16/34 ,  H01L21/28 ,  H01L21/318 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  B05D5/12

Abstract: CHEMICAL VAPOR DEPOSITION OF FILMS AND RESULTING PRODUCTS Method for depositing a layer containing-Al, N, and Si on a substrate which comprises providing a substrate to be coated, a carrier gas, and a gaseous mixture of nitrogen source compounds, aluminum source compounds and silicon source material and heating the substrate to a temperature in the range of about 500 to about 1,300.degree.C to thereby cause formation on the substrate of a layer containing Al, N, and Si: and products obtained by the method.