公开(公告)号：DE2826329A1

公开(公告)日：1979-01-11

申请号：DE2826329

申请日：1978-06-16

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  CHAN SEE ARK ,  REISMAN ARNOLD ,  ZIRINSKY STANLEY

IPC: B05B1/00 ,  B41J2/135 ,  C04B41/53 ,  C04B41/91 ,  C23F1/00 ,  G01F1/42 ,  H01L21/308 ,  H03H7/06 ,  B44C1/22 ,  C23F1/02

Abstract: A method for etching at least one aperture having a defined crystallographic geometry in single crystals which includes masking the crystal to protect predetermined portions thereof from being etched, and then anisotropically etching with a mixture of sulfuric acid and phosphoric acid.

公开(公告)号：DE2636280A1

公开(公告)日：1977-03-10

申请号：DE2636280

申请日：1976-08-12

Applicant: IBM

Inventor： IRENE EUGENE ARTHUR ,  SILVESTRI VICTOR JOSEPH ,  ZIRINSKY STANLEY

IPC: H01L27/112 ,  C23C16/22 ,  C23C16/34 ,  H01L21/28 ,  H01L21/318 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76 ,  H01B5/14 ,  G11C17/04 ,  G11C11/24

Abstract: Method for depositing a layer containing Al; N, and Si on a substrate which comprises providing a substrate to be coated, a carrier gas, and a gaseous mixture of nitrogen source compounds, aluminum source compounds and silicon source material and heating the substrate to a temperature in the range of about 500 DEG to about 1,300 DEG C to thereby cause formation on the substrate of a layer containing Al, N, and Si; and products obtained by the method.

公开(公告)号：CA1100648A

公开(公告)日：1981-05-05

申请号：CA301740

申请日：1978-04-21

Applicant: IBM

Inventor： CROWDER BILLY L ,  ZIRINSKY STANLEY

IPC: H01L21/60 ,  H01B13/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/49 ,  H01L29/78 ,  H01L21/36

Abstract: METHOD FOR PROVIDING A METAL SILICIDE LAYER ON A SUBSTRATE A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.

公开(公告)号：CA1071941A

公开(公告)日：1980-02-19

申请号：CA258879

申请日：1976-08-11

Applicant: IBM

Inventor： IRENE EUGENE A ,  SILVESTRI VICTOR J ,  ZIRINSKY STANLEY

IPC: H01L27/112 ,  C23C16/22 ,  C23C16/34 ,  H01L21/28 ,  H01L21/318 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  B05D5/12

Abstract: CHEMICAL VAPOR DEPOSITION OF FILMS AND RESULTING PRODUCTS Method for depositing a layer containing-Al, N, and Si on a substrate which comprises providing a substrate to be coated, a carrier gas, and a gaseous mixture of nitrogen source compounds, aluminum source compounds and silicon source material and heating the substrate to a temperature in the range of about 500 to about 1,300.degree.C to thereby cause formation on the substrate of a layer containing Al, N, and Si: and products obtained by the method.

公开(公告)号：DE2861841D1

公开(公告)日：1982-07-08

申请号：DE2861841

申请日：1978-06-22

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  ZIRINSKY STANLEY

IPC: H01L21/60 ,  H01B13/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/49 ,  H01L29/78 ,  H01L29/62

Abstract: A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.

公开(公告)号：CA1101765A

公开(公告)日：1981-05-26

申请号：CA305345

申请日：1978-06-13

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  CHAN SEE A ,  REISMAN ARNOLD ,  ZIRINSKY STANLEY

IPC: B05B1/00 ,  B41J2/135 ,  C04B41/53 ,  C04B41/91 ,  C23F1/00 ,  G01F1/42 ,  H01L21/308 ,  H03H7/06 ,  C09K13/04 ,  B01J17/00

Abstract: - PROCESS FOR ETCHING HOLES A method for etching at least one aperture having a defined crystallographic geometry in single crystals which includes masking the crystal to protect predetermined portions thereof from being etched, and then anisotropically etching with a mixture of sulfuric acid and phosphoric acid.

公开(公告)号：FR2395820A1

公开(公告)日：1979-01-26

申请号：FR7816947

申请日：1978-05-29

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  CHAN SEE ARK ,  REISMAN ARNOLD ,  ZIRINSKY STANLEY

IPC: B05B1/00 ,  B41J2/135 ,  C04B41/53 ,  C04B41/91 ,  C23F1/00 ,  G01F1/42 ,  H01L21/308 ,  H03H7/06 ,  B28D5/06 ,  B41J3/04

Abstract: A method for etching at least one aperture having a defined crystallographic geometry in single crystals which includes masking the crystal to protect predetermined portions thereof from being etched, and then anisotropically etching with a mixture of sulfuric acid and phosphoric acid.