公开(公告)号：AU6358399A

公开(公告)日：2000-05-29

申请号：AU6358399

申请日：1999-10-27

Applicant: IBM

Inventor： JADUS DALE ,  NGUYEN-NGOC DOMINIQUE ,  WALER KEITH

IPC: H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/06 ,  H01L29/73 ,  H01L29/732

Abstract: A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At least one base contact overlies the at least one base region and is associated with each transistor. A plurality of the base contacts are common to at least two transistors in the array. At least one collector reach through is associated with each transistor. A collector reach through contact overlies each collector reach through. A buried layer subcollector region of electrically conducting material electrically connects the collector reach through region to the collector pedestal region of each transistor.

公开(公告)号：CZ20011568A3

公开(公告)日：2001-11-14

申请号：CZ20011568

申请日：1999-10-27

Applicant: IBM

Inventor： GROVES ROBERT ,  JADUS DALE ,  NGUYER-NGOC DOMINIQUE ,  WALER KEITH

IPC: H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/06 ,  H01L29/73 ,  H01L29/732

Abstract: A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At least one base contact overlies the at least one base region and is associated with each transistor. A plurality of the base contacts are common to at least two transistors in the array. At least one collector reach through is associated with each transistor. A collector reach through contact overlies each collector reach through. A buried layer subcollector region of electrically conducting material electrically connects the collector reach through region to the collector pedestal region of each transistor.

公开(公告)号：HU0104030A2

公开(公告)日：2002-03-28

申请号：HU0104030

申请日：1999-10-27

Applicant: IBM

Inventor： GROVES ROBERT ,  JADUS DALE ,  NGUYEN-NGOC DOMINIQUE ,  WALER KEITH

IPC: H01L21/768 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/06 ,  H01L29/73 ,  H01L29/732

Abstract: A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At least one base contact overlies the at least one base region and is associated with each transistor. A plurality of the base contacts are common to at least two transistors in the array. At least one collector reach through is associated with each transistor. A collector reach through contact overlies each collector reach through. A buried layer subcollector region of electrically conducting material electrically connects the collector reach through region to the collector pedestal region of each transistor.

公开(公告)号：PL347361A1

公开(公告)日：2002-04-08

申请号：PL34736199

申请日：1999-10-27

Applicant: IBM

Inventor： GROVES ROBERT ,  JADUS DALE ,  NGUYEN-NGOC DOMINIQUE ,  WALER KEITH

IPC: H01L21/768 ,  H01L21/8222 ,  H01L27/082 ,  H01L21/331 ,  H01L29/06 ,  H01L29/73 ,  H01L29/732

Abstract: A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At least one base contact overlies the at least one base region and is associated with each transistor. A plurality of the base contacts are common to at least two transistors in the array. At least one collector reach through is associated with each transistor. A collector reach through contact overlies each collector reach through. A buried layer subcollector region of electrically conducting material electrically connects the collector reach through region to the collector pedestal region of each transistor.