1.
    发明专利
    未知

    公开(公告)号:DE69228422D1

    公开(公告)日:1999-03-25

    申请号:DE69228422

    申请日:1992-11-24

    Applicant: IBM

    Abstract: Optical waveguide isolator (121) for monolithic integration with semiconductor light emitting diodes such as Fabry-Perot or ring laser diodes. The present optical isolator (121), with optical input port (95) and output port (96), comprises a branching waveguide coupler (56). This branching waveguide coupler (56) has a waveguide stem (60) splitted at one end into two waveguide branches (57,58) such that a light wave fed via said input port (95) into a first of these branches (58), is guided via the waveguide stem (60) and the output port (96) out of the device. A light wave fed to the isolator's output port (96) is guided along the stem (60) and coupled into the second waveguide branch (57) to the absorber (54).

    2.
    发明专利
    未知

    公开(公告)号:DE69112058T2

    公开(公告)日:1996-05-02

    申请号:DE69112058

    申请日:1991-09-19

    Applicant: IBM

    Abstract: Disclosed is a method for efficient and self-aligned laser to waveguide coupling being an important step towards higher integration of opto-electronic circuits. For automatic alignment of an optical waveguide (67 - 69) to a ridge waveguide laser (50 - 52), the ridge structure (54) of the laser is transferred into the substrate (50) by etching the mirror groove. The transferred ridge structure (55) serves as base for the deposition of the waveguide layers (67 -69), their thickness being controlled during the deposition such that the waveguide core (69) is laterally and vertically aligned to the lasing active layer (51) of the laser structure (50 - 52).

    5.
    发明专利
    未知

    公开(公告)号:DE69112058D1

    公开(公告)日:1995-09-14

    申请号:DE69112058

    申请日:1991-09-19

    Applicant: IBM

    Abstract: Disclosed is a method for efficient and self-aligned laser to waveguide coupling being an important step towards higher integration of opto-electronic circuits. For automatic alignment of an optical waveguide (67 - 69) to a ridge waveguide laser (50 - 52), the ridge structure (54) of the laser is transferred into the substrate (50) by etching the mirror groove. The transferred ridge structure (55) serves as base for the deposition of the waveguide layers (67 -69), their thickness being controlled during the deposition such that the waveguide core (69) is laterally and vertically aligned to the lasing active layer (51) of the laser structure (50 - 52).

Patent Agency Ranking