公开(公告)号：DE69228422D1

公开(公告)日：1999-03-25

申请号：DE69228422

申请日：1992-11-24

Applicant: IBM

Inventor： CLAUBERG ROLF DR ,  HARDER CHRISTOPH DR ,  HEUSCH CHRISTIAN ,  JAECKEL HEINZ DR

IPC: G02B6/122 ,  G01C19/66 ,  G02B6/125 ,  G02B6/24 ,  H01S3/00 ,  H01S3/083 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  G02F1/095 ,  G02B6/12

Abstract: Optical waveguide isolator (121) for monolithic integration with semiconductor light emitting diodes such as Fabry-Perot or ring laser diodes. The present optical isolator (121), with optical input port (95) and output port (96), comprises a branching waveguide coupler (56). This branching waveguide coupler (56) has a waveguide stem (60) splitted at one end into two waveguide branches (57,58) such that a light wave fed via said input port (95) into a first of these branches (58), is guided via the waveguide stem (60) and the output port (96) out of the device. A light wave fed to the isolator's output port (96) is guided along the stem (60) and coupled into the second waveguide branch (57) to the absorber (54).

公开(公告)号：DE69204828T2

公开(公告)日：1996-05-02

申请号：DE69204828

申请日：1992-06-09

Applicant: IBM

Inventor： FORSTER THEODOR ,  HARDER CHRISTOPH DR ,  OOSENBRUG ALBERTUS ,  RUBLOFF GARY W

IPC: H01S5/00 ,  H01S5/02 ,  H01S3/025

Abstract: Method for full-wafer processing of laser diodes with cleaved facets combining the advantages of full-wafer processing, to date known from processing lasers with etched facets, with the advantages of cleaved facets. The basic steps of are: 1. defining the position (17) of the facets (18,19) to be cleaved by scribing marks (13) into the top surface of a laser structure comprising epitaxially grown layers, these scribed marks being perpendicular to the optical axis of the lasers to be made, the scribed marks being parallel, their distance (Ic) defining the lenght of the laser cavities and the distance (Ib) between the facets of neighboring laser diodes; 2. covering the uppermost portion of said layers with an etch mask pattern which covers each laser diode to be made such that it extends over the scribed marks of each laser and provides for etch windows between the scribed marks defining the position of facets of neighboring lasers; 3. etching trenches into an upper portion of said laser structure, the shape and location of said trenches being defined by said etch winddows; 4. partly underetching (16) said upper portion during a second etch step such that said laser facets (18,19) can be defined by cleaving said upper portion along said scribed marks (13) without cleaving the whole laser structure; 5. ultrasonically or mechanically cleaving said upper portions being underetched along said scribed marks providing for facets (18,19) being perpendicular to said layers and the optical axis; 6. separating the laser diodes by cleaving them between neighboring lasers.

公开(公告)号：DE69006353T2

公开(公告)日：1994-06-23

申请号：DE69006353

申请日：1990-05-25

Applicant: IBM

Inventor： BROOM RONALD F DR ,  GASSER MARCEL ,  HARDER CHRISTOPH DR ,  LATTA ERNST-EBERHARD DR ,  OOSENBRUG ALBERTUS ,  RICHARD HEINZ ,  VETTIGER PETER

IPC: B28D5/00 ,  H01L21/301 ,  H01S5/00 ,  H01S5/02 ,  H01L21/00

Abstract: A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer (11), provided with scribe lines (15) defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands (12,13) and guiding it around a curved, large radius surface (21) thereby applying a bending moment. With a moment of sufficient magnitude, individual bars (22) are broken off the wafer as this is advanced, the bars having front- and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighbouring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.

公开(公告)号：DE69006353D1

公开(公告)日：1994-03-10

申请号：DE69006353

申请日：1990-05-25

Applicant: IBM

Inventor： BROOM RONALD F DR ,  GASSER MARCEL ,  HARDER CHRISTOPH DR ,  LATTA ERNST-EBERHARD DR ,  OOSENBRUG ALBERTUS ,  RICHARD HEINZ ,  VETTIGER PETER

IPC: B28D5/00 ,  H01L21/301 ,  H01S5/00 ,  H01S5/02 ,  H01L21/00

Abstract: A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer (11), provided with scribe lines (15) defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands (12,13) and guiding it around a curved, large radius surface (21) thereby applying a bending moment. With a moment of sufficient magnitude, individual bars (22) are broken off the wafer as this is advanced, the bars having front- and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighbouring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.

公开(公告)号：DE69204828D1

公开(公告)日：1995-10-19

申请号：DE69204828

申请日：1992-06-09

Applicant: IBM

Inventor： FORSTER THEODOR ,  HARDER CHRISTOPH DR ,  OOSENBRUG ALBERTUS ,  RUBLOFF GARY W

IPC: H01S5/00 ,  H01S5/02 ,  H01S3/025

Abstract: Method for full-wafer processing of laser diodes with cleaved facets combining the advantages of full-wafer processing, to date known from processing lasers with etched facets, with the advantages of cleaved facets. The basic steps of are: 1. defining the position (17) of the facets (18,19) to be cleaved by scribing marks (13) into the top surface of a laser structure comprising epitaxially grown layers, these scribed marks being perpendicular to the optical axis of the lasers to be made, the scribed marks being parallel, their distance (Ic) defining the lenght of the laser cavities and the distance (Ib) between the facets of neighboring laser diodes; 2. covering the uppermost portion of said layers with an etch mask pattern which covers each laser diode to be made such that it extends over the scribed marks of each laser and provides for etch windows between the scribed marks defining the position of facets of neighboring lasers; 3. etching trenches into an upper portion of said laser structure, the shape and location of said trenches being defined by said etch winddows; 4. partly underetching (16) said upper portion during a second etch step such that said laser facets (18,19) can be defined by cleaving said upper portion along said scribed marks (13) without cleaving the whole laser structure; 5. ultrasonically or mechanically cleaving said upper portions being underetched along said scribed marks providing for facets (18,19) being perpendicular to said layers and the optical axis; 6. separating the laser diodes by cleaving them between neighboring lasers.

公开(公告)号：DE69010485T2

公开(公告)日：1995-01-26

申请号：DE69010485

申请日：1990-04-06

Applicant: IBM

Inventor： HARDER CHRISTOPH DR ,  HEUBERGER WILHELM ,  HOH PETER ,  WEBB DAVID

IPC: H01S5/00 ,  H01L21/318 ,  H01S5/22 ,  H01L33/00 ,  H01S3/19 ,  H01L21/308

Abstract: A process for forming the ridge structure of a self-aligned semiconductor laser, particularly useful for long wavelength devices as required for signal transmission systems. Described is the process as applied to an InP-system, double heterostructure (DH) laser. A thin Si3N4 layer (41) is inserted between the photoresist mask (42) that defines the ridge structure, and the contact layer (35). This results in improved adhesion and reduced etch undercutting whereby the ohmic contact area is increased, heat development decreased and device properties improved. Using a Si3N4 layer (41) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si3N4 layer (43) for device embedding, provides for the etch selectivity required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.

公开(公告)号：DE69010485D1

公开(公告)日：1994-08-11

申请号：DE69010485

申请日：1990-04-06

Applicant: IBM

Inventor： HARDER CHRISTOPH DR ,  HEUBERGER WILHELM ,  HOH PETER ,  WEBB DAVID

IPC: H01S5/00 ,  H01L21/318 ,  H01S5/22 ,  H01L33/00 ,  H01S3/19 ,  H01L21/308

Abstract: A process for forming the ridge structure of a self-aligned semiconductor laser, particularly useful for long wavelength devices as required for signal transmission systems. Described is the process as applied to an InP-system, double heterostructure (DH) laser. A thin Si3N4 layer (41) is inserted between the photoresist mask (42) that defines the ridge structure, and the contact layer (35). This results in improved adhesion and reduced etch undercutting whereby the ohmic contact area is increased, heat development decreased and device properties improved. Using a Si3N4 layer (41) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si3N4 layer (43) for device embedding, provides for the etch selectivity required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.