公开(公告)号：US3859654A

公开(公告)日：1975-01-07

申请号：US29670772

申请日：1972-10-11

Applicant: IBM

Inventor： HARRISON THOMAS J ,  HELLWARTH GEORGE A ,  JAEGER RICHARD C

IPC: H03M1/50 ,  H03M1/00 ,  H03K13/20

CPC classification number: H03M1/50

Abstract: Unknown bipolar analog signals are converted to equivalent digital signals by comparison with positive and negative reference voltages. Sampling is performed for a preselected time period during which the reference voltages are alternately compared against the unknown analog signal. The reference polarity is switched each time the comparison result indicates a polarity change. Counting of clock pulses during all times one of the reference voltages is applied for the preselected period results in the digital equivalent of the analog input.

Abstract translation: 与正和负参考电压相比，未知的双极模拟信号被转换为等效的数字信号。 在预选的时间段执行采样，在此期间参考电压与未知模拟信号交替地进行比较。 每次比较结果表示极性变化时，参考极性被切换。 在所有时间内对时钟脉冲进行计数，一个参考电压被施加在预选的周期，导致模拟输入的数字等效。

公开(公告)号：CA1003112A

公开(公告)日：1977-01-04

申请号：CA182972

申请日：1973-10-09

Applicant: IBM

Inventor： HARRISON THOMAS J ,  HELLWARTH GEORGE A ,  JAEGER RICHARD C

IPC: H03M1/50 ,  H03M1/00

公开(公告)号：CA1130473A

公开(公告)日：1982-08-24

申请号：CA337644

申请日：1979-10-15

Applicant: IBM

Inventor： CROWDER BILLY L ,  GAENSSLEN FRITZ H ,  JAEGER RICHARD C

IPC: H01L29/78 ,  H01L21/265 ,  H01L29/10 ,  H01L29/167

Abstract: MOSFET SUBSTRATE SENSITIVITY CONTROL The sensitivity of the threshold voltage in MOSFET devices to changes in substrate voltage may be reduced at a given temperature by the introduction of sufficiently deep energy level, low diffusivity impurities into the depletion region under the gate of the MOSFET. Y0978-020

公开(公告)号：DE2350802A1

公开(公告)日：1974-04-25

申请号：DE2350802

申请日：1973-10-10

Applicant: IBM

Inventor： HARRISON THOMAS J ,  HELLWARTH GEORGE A ,  JAEGER RICHARD C

IPC: H03M1/50 ,  H03M1/00 ,  H03K13/20