公开(公告)号：GB2609775B

公开(公告)日：2025-04-16

申请号：GB202215020

申请日：2021-02-01

Applicant: IBM

Inventor： POUYA HASHEMI ,  BRUCE DORIS ,  JANUSZ JOZEF NOWAK ,  JONATHAN ZANHONG SUN

IPC: H10N50/10 ,  G11C11/15 ,  G11C11/16 ,  H10N50/01 ,  H10N50/85

Abstract: A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than a width of the first magnetic tunnel junction stack.