公开(公告)号：SG46459A1

公开(公告)日：1998-02-20

申请号：SG1996004874

申请日：1993-10-05

Applicant: IBM

Inventor： JENG SWU-JEN ,  NATZLE WESLEY C ,  YU CHIENFAN

IPC: H01L21/00 ,  H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/311

Abstract: New device and method are described for accurate etching and removal of thin layer by controlling the surface residence time, thickness and composition of reactant containing film. Etching of silicon dioxide at low pressure using a quartz crystal microbalance is illustrated. Usefulness of the invention in the manufacture of microelectronic devices is shown.