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    METHOD OF END-POINT DETECTION UTILIZING CHEMICAL REACTION
    1.
    发明专利
    METHOD OF END-POINT DETECTION UTILIZING CHEMICAL REACTION 失效

    公开(公告)号：JP2000031102A

    公开(公告)日：2000-01-28

    申请号：JP11778999

    申请日：1999-04-26

    Applicant: IBM

    Inventor： REEPIN RII ,  JAMES ALBERT GILHOOLEY ,  CLIFFORD OWEN MORGAN ,  CONN WAY ,  YU CHIENFAN ,  WILLIAM JOSEPH SALOWITZ

    IPC: H01L21/302 ,  B24B37/013 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/66 ,  B24B37/04

    Abstract: PROBLEM TO BE SOLVED: To detect end point for a target film lying on a stopper film by monitoring a reaction product during removal of the target film with a process that generates the chemical-reaction product from either the stopper film or the target film. SOLUTION: A target film is removed by a process that generates a chemical- reaction product selectively from a stopper film or from the target film. Namely, in chemical-mechanical polishing of a substrate 100 on which a target film 104 of an oxide (SiO2) lies on a stopper film 102 of a nitride (Si3N4) with slurry (mixture of micro-silica, water, and KOH), ammonium (NH3) is generated by a chemical reaction when the removal reaches the boundary 106. The level change of the ammonium in the slurry indicates that the removal reaches the underlying nitride film, and consequently, by monitoring the level of ammonium in the slurry, end point of the oxide film removal can be judged. When the end point is reached, the polishing is stopped.

    ANISOTROPIC ETCHING METHOD
    2.
    发明专利
    ANISOTROPIC ETCHING METHOD 失效

    公开(公告)号：JPH11260798A

    公开(公告)日：1999-09-24

    申请号：JP1536899

    申请日：1999-01-25

    Applicant: IBM

    Inventor： ARMACOST MICHAEL D ,  DOBUZINSKY DAVID M ,  MALINOWSKI JOHN C ,  NG HUNG Y ,  WISE RICHARD S ,  YU CHIENFAN

    IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311

    Abstract: PROBLEM TO BE SOLVED: To provide a method for anisotropic etching of a nitride layer on a substrate. SOLUTION: In this etching process, an etchant gas containing fluorohydrocarbon rich in hydrogen, oxidant and carbon source is used. It is preferable that the fluorohydrocarbon rich is hydrogen be CH3 or CH2 F2 , the carbon source be CO2 or CO, and the oxidant be O2 . It is preferable that the fluorohydrocarbon exsist in a gas of about 7-35 vol.%, the oxidant exsist in a gas of about 1-35 vol.%, and the carbon source exsists in a gas of about 30-92 vol.%.

    4.
    发明专利
    未知

    公开(公告)号：AT219292T

    公开(公告)日：2002-06-15

    申请号：AT93480154

    申请日：1993-10-05

    Applicant: IBM

    Inventor： JENG SHWU-JEN ,  NATZLE WESLEY C ,  YU CHIENFAN

    IPC: C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/306

    Abstract: New device and method are described for accurate etching and removal of thin layer by controlling the surface residence time, thickness and composition of reactant containing film. Etching of silicon dioxide at low pressure using a quartz crystal microbalance is illustrated. Usefulness of the invention in the manufacture of microelectronic devices is shown.

    5.
    发明专利
    未知

    公开(公告)号：DE69332013D1

    公开(公告)日：2002-07-18

    申请号：DE69332013

    申请日：1993-10-05

    Applicant: IBM

    Inventor： JENG SHWU-JEN ,  NATZLE WESLEY C ,  YU CHIENFAN

    IPC: H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  C23F4/00 ,  H01L21/311 ,  H01L21/306

    Abstract: New device and method are described for accurate etching and removal of thin layer by controlling the surface residence time, thickness and composition of reactant containing film. Etching of silicon dioxide at low pressure using a quartz crystal microbalance is illustrated. Usefulness of the invention in the manufacture of microelectronic devices is shown.

    9.
    发明专利
    未知

    公开(公告)号：DE60215513T2

    公开(公告)日：2007-07-05

    申请号：DE60215513

    申请日：2002-08-06

    Applicant: IBM ,  INFINEON TECHNOLOGIES AG

    Inventor： DOBUZINSKY MARK ,  KHAN ALI ,  LIU C ,  WENSLEY PAUL ,  YU CHIENFAN

    IPC: H01L21/8242 ,  H01L21/3213 ,  H01L21/60 ,  H01L21/8234

    Abstract: A method of fabricating an integrated circuit chip having a first region of a first layout rule and a second region of a second layout rule. The method includes using a first material to establish a first hard mask pattern in only the first region and using a second material to establish a second hard mask pattern on top of the first hard mask pattern. The second material is additionally used to establish a third hard mask pattern in the second region.

    10.
    发明专利
    未知

    公开(公告)号：DE69332013T2

    公开(公告)日：2003-01-30

    申请号：DE69332013

    申请日：1993-10-05

    Applicant: IBM

    Inventor： JENG SHWU-JEN ,  NATZLE WESLEY C ,  YU CHIENFAN

    IPC: H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  C23F4/00 ,  H01L21/311 ,  H01L21/306

    Abstract: New device and method are described for accurate etching and removal of thin layer by controlling the surface residence time, thickness and composition of reactant containing film. Etching of silicon dioxide at low pressure using a quartz crystal microbalance is illustrated. Usefulness of the invention in the manufacture of microelectronic devices is shown.

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