公开(公告)号：GB2601056A

公开(公告)日：2022-05-18

申请号：GB202114896

申请日：2021-10-19

Applicant: IBM

Inventor： JIM SHIH-CHUN LIANG ,  BAOZHEN LI ,  CHIH-CHAO YANG

IPC: H01L23/522

Abstract: The integrated circuit structure includes back end of line (BEOL) wiring layers and capacitor plates (306, 310, 314, 318, 322) formed in an interlayer dielectric device layer. Some of the capacitor electrodes may be formed from the same material as the wiring layers. The capacitor may include multiple interleaved electrode plates that are interconnected by conductive vias 428. The capacitor dielectric layers (316, 320) are formed from high dielectric constant materials such as La2O, ZrO2, and HfO2.