公开(公告)号：JPH0341449A

公开(公告)日：1991-02-21

申请号：JP15885490

申请日：1990-06-19

Applicant: IBM

Inventor： PATORITSUKU KURINTON AANETSUTO ,  ANDAAZU BURAIANTO ,  JIYON SUCHIYUAATO FUOSUTAA ,  JIYUUN ERIZABESU FUROOMAA ,  JIYON ASAO KARII IWATA

IPC: G01Q60/00 ,  G03F1/00 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To improve the resolution of a mask by applying a prescribed voltage pulse to a tunnel probe and changing the electric conductivity of the films on a substrate, thereby forming the mask which does not require the removal of the one film varying in the electric conductivity. CONSTITUTION: The film 10 in an amorphous state consisting of GeTe, etc., is formed on the substrate 11 consisting of Si, etc. The electron radiation probe 12 of a scanning type tunnel microscope is then placed within the prescribed tunnel distance of the film 10 and, thereafter, while the probe is moved in an arrow 14 direction, the prescribed voltage pulses (a), (b), (c) dependent upon the thickness of the film 10 are applied between the probe 12 and the film 10 to locally heat the a', b', c' parts of the film 10 and to crystallize these parts by changing their electric conductivity. As a result, the mask 15 which does not require the removal of the amorphous parts is obtd. The mask 15 is used and the voltage pulses are then applied between the mask and the film 16 on the wafer 17 to chemically change the desired parts of the film 16 or to cause the phase change thereof and, thereafter, the film 16 is patterned by executing peeling or etching.