公开(公告)号：GB2600544B

公开(公告)日：2023-01-11

申请号：GB202113289

申请日：2021-09-17

Applicant: IBM

Inventor： NING LI ,  JOEL P DE SOUZA ,  KEVIN W BREW ,  DEVENDRA K SADANA

IPC: G11C11/56 ,  G11C13/00

Abstract: A Phase-Change Memory (PCM) device includes a dielectric layer, a bottom electrode disposed in the dielectric layer, a liner material disposed on the bottom electrode, a phase-change material disposed on the liner material, and a top electrode disposed on the phase-change material and in the dielectric layer.

公开(公告)号：GB2600544A

公开(公告)日：2022-05-04

申请号：GB202113289

申请日：2021-09-17

Applicant: IBM

Inventor： NING LI ,  JOEL P DE SOUZA ,  KEVIN W BREW ,  DEVENDRA K SADANA

IPC: G11C11/56 ,  G11C13/00 ,  H01L45/00

Abstract: A Phase-Change Memory (PCM) device 102 comprising a dielectric layer 206, bottom electrode 204 in dielectric layer, a liner material 203 on bottom electrode, a phase-change material 202, 205 on the liner material and a top electrode 201 on the phase-change material and in the dielectric layer. The liner material and phase change material PCM may be in the dielectric layer. The liner material may comprise a conductive oxide thin film such as Al doped ZnO (AZO), doped indium oxide with tin (ITO) or doped metal oxide. Alternatively the liner material may comprise a metal layer formed of Aluminium Al only or Al disposed over a conductive oxide thin film (e.g Al doped ZnO (AZO)).The dielectric layer may comprise several dielectric layers. Electrodes may comprise of metal nitride (TaN, TiN, WN). A method of manufacture is included. Alternative phase-change memory includes first electrode and second on first and second side respectively of dielectric layer, the phase-change material on dielectric layer and first and second electrodes, and a liner material disposed on the phase-change material (figure 7). Figure 8 is another embodiment. The liner may reduce resistance drift acting as an inert or thermal cap further reducing heat loss.