1.
    发明专利
    未知

    公开(公告)号:IT7925328D0

    公开(公告)日:1979-08-29

    申请号:IT2532879

    申请日:1979-08-29

    Applicant: IBM

    Abstract: Disclosed is a field effect transistor (FET) circuit for accepting a bipolar transistor logic level input signal and providing FET logic level output signals (both in-phase and out-of-phase components). The FET circuit includes a gated latch with means for pre-charging first and second nodes to an FET logic up level. One of the two nodes is brought to a slightly higher or lower level (depending on the binary value of the input), thereby producing a latent imbalance in the latch. A gating signal causes the latch to switch into the state pre-set by the latent imbalance.

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