公开(公告)号：DE1564151A1

公开(公告)日：1969-07-24

申请号：DEJ0030835

申请日：1966-05-14

Applicant: IBM

Inventor： FU FANG FRANK ,  NIEN YU HWA ,  JOHN WALKER EDWARD

IPC: H01L27/088 ,  H01L21/00 ,  H01L21/22 ,  H01L21/316 ,  H01L21/8234 ,  H01L21/8236 ,  H01L29/00 ,  H01L29/78 ,  H01L11/14

Abstract: A method for manufacturing a field-effect, isolated-barrier transistor, comprising the steps of: forming by diffusion separate parts, of a first type of conductivity, on the surface of an elementary semiconductor wafer of the opposite conductivity type; forming an insulating layer at least in the intermediate part of said surface lying between said diffused portions separated and defining a conduit channel therebetween, having a given surface potential the interfacial zone between said insulating layer and said intermediate portion of said surface. said wafer; and forming on said insulating layer a barrier electrode for applying electric fields to said intermediate surface portion; method characterized by the improvement comprising the step of passing through diffusion an impurity material of the acceptor type, through said insulating layer and until penetrating a narrow layer of said intermediate surface part before forming said barrier electrode, for control the surface potential in said interfacial zone. (Machine-translation by Google Translate, not legally binding)

公开(公告)号：DE1489338A1

公开(公告)日：1968-12-19

申请号：DE1489338

申请日：1964-01-16

Applicant: IBM

Inventor： EARL MICHEL ALWIN ,  JOHN WALKER EDWARD

IPC: G09G3/00 ,  G09G3/04 ,  G09G3/14 ,  H01L27/00 ,  H01L33/00