-
公开(公告)号：JPH11273337A
公开(公告)日：1999-10-08
申请号：JP2634499
申请日：1999-02-03
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
CPC classification number: H01L27/224 , G11C11/15 , G11C11/16
Abstract: PROBLEM TO BE SOLVED: To obtain a magnetic memory which has a 1st and a 2nd crossing conductor forming an intersection area. SOLUTION: The magnetic memory cell 642 includes a variable magnetic area having a magnetic axis given two magnetization direction along itself, and consequently two kinds of state that the cell can change into according to electricity applied thereto and the resulting magnetic stimulation are provided. In order to enable the predictable development of a magnetic pattern from the 1st direction to the 2nd direction, the asymmetry of the magnetic stimulation applied to the cell while some state is written thereto is disclosed. Further, the layout of the cell or the physical asymmetry of magnetism which enables the predictable development of the pattern are also disclosed. This principle is applicable to a magnetic random access memory(MRAM) array using a magnetic tunneling junction cell at the intersection of a bit line and a word line supplying electricity and the resulting magnetic stimulation so as to write the cell therein.
Abstract translation: 要解决的问题：获得具有形成交叉区域的第一和第二交叉导体的磁性存储器。 解决方案：磁存储单元642包括具有沿其自身给定两个磁化方向的磁轴的可变磁区，并且因此提供了根据施加到其上的电池可以改变的两种状态，并且提供了所得到的磁刺激。 为了实现从第1方向到第2方向的磁性图案的可预测的发展，公开了一些状态被写入时施加到单元的磁刺激的不对称性。 此外，还公开了能够预测图案的发展的单元的布局或磁性的物理不对称性。 该原理适用于在位线和提供电力的字线的交叉处使用磁性隧道结单元的磁性随机存取存储器（MRAM）阵列和所产生的磁刺激，以便在其中写入单元。
-
公开(公告)号：JPH11317071A
公开(公告)日：1999-11-16
申请号：JP2629199
申请日：1999-02-03
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: PROBLEM TO BE SOLVED: To improve the quality and the uniformity of responses with respect to an applied magnetic write stimulation by providing at least magnetic tunnel junctions which are operatable by using at least one electrode and which are simultaneously writable so as to be in an averaged state in acordance with magnetic stimulation applied to them by first and second electrodes. SOLUTION: A magnetic memory cell 109 consisting of magnetic tunnel junctions 108a, 108b is provided between conductors 103, 105. The magnetic tunnel junctions 108a, 108b include reference areas 120a, 120b, tunnel areas 122a, 122b and free areas 124a, 124b. Writing of the magnetic cell 109 is executed by changing magnetization directions being in the free areas 124a, 124b in accordance with electric signal applied by the conductors 103, 105, or resultingly a magnetic stimulation. An effective operation window of an electric and resulting magnetic stimulations can be obtained in the whole areas of an array by the averaged response of the magnetic tunnel junctions 108a, 108b.
-
公开(公告)号：JPH104227A
公开(公告)日：1998-01-06
申请号：JP5877797
申请日：1997-03-13
Applicant: IBM
Inventor： GALLAGHER WILLIAM JOSEPH , PARKIN STUART STEPHEN PAPWORTH , SLONCZEWSKI JOHN CASIMIR , JONATHAN ZANHON SAN
IPC: G01R33/06 , G01R33/09 , G11B5/39 , G11C11/14 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: PROBLEM TO BE SOLVED: To control magnetoresistance response to a magnetic signal by a method wherein a constrained ferromagnetic layer, having a side part circumfer ence which is not extended over the side part circumference of an insulating tunnel layer, is retained within the another spaced plane surface without overlap ping with an insulating tunnel layer. SOLUTION: Write in an MJT is attained by allowing a current to flow through the upper and lower electrode wiring layers on the memory cell application of a magnetic tunnel junction MTJ element. When a sufficiently large current is allowed to flow through the above-mentioned lines, the magnetization direction of a free ferromagnetic layer 32 is rotated in reverse parallel from parallel to the magnetization direction of a constrained ferromagnetic layer 18 by the coupled magnetic field formed in the vicinity of a free ferromagnetic layer 32. Current level is selected in such a manner that the coupling magnetic field to be formed exceeds the switching field of the free ferromagnetic layer. The magnetic field formed by a coupling write-in current is selected smaller than the magnetic field required for rotation of the magnetization direction of the constrained ferromagnetic layer.
-
公开(公告)号：DE69115751T2
公开(公告)日：1996-07-11
申请号：DE69115751
申请日：1991-01-11
Applicant: IBM
Inventor： GALLAGHER WILLIAM JOSEPH , WORTHINGTON THOMAS KIMBER
-
公开(公告)号：DE69903206T2
公开(公告)日：2003-07-10
申请号：DE69903206
申请日：1999-01-20
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array. Only the cell at an intersecting region selected by stimuli applied via each of the first and second electrically conductive lines forming the selected region is written, and other cells along the first and second electrically conductive lines forming the selected region are not written. An operating window of applied electrical and therefore magnetic stimuli can be defined to ensure cell selectivity across the memory array.
-
Patent Agency Ranking
公开(公告)号：AU604119B2
公开(公告)日：1990-12-06
申请号：AU1632288
申请日：1988-05-17
Applicant: IBM
-
公开(公告)号：AU1632288A
公开(公告)日：1988-11-24
申请号：AU1632288
申请日：1988-05-17
Applicant: IBM
-
公开(公告)号：DE69115751D1
公开(公告)日：1996-02-08
申请号：DE69115751
申请日：1991-01-11
Applicant: IBM
Inventor： GALLAGHER WILLIAM JOSEPH , WORTHINGTON THOMAS KIMBER
-
公开(公告)号：DE68908480T2
公开(公告)日：1994-03-17
申请号：DE68908480
申请日：1989-04-15
Applicant: IBM
-
公开(公告)号：DE69903206D1
公开(公告)日：2002-11-07
申请号：DE69903206
申请日：1999-01-20
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array. Only the cell at an intersecting region selected by stimuli applied via each of the first and second electrically conductive lines forming the selected region is written, and other cells along the first and second electrically conductive lines forming the selected region are not written. An operating window of applied electrical and therefore magnetic stimuli can be defined to ensure cell selectivity across the memory array.
-
-
-
-
-
-
-
-
-
Search Results
18
records
(took 0.018 seconds)
