公开(公告)号：DE1589196A1

公开(公告)日：1970-02-26

申请号：DE1589196

申请日：1967-09-13

Applicant: IBM

Inventor： JOSEPH BUSZKO LEONARD ,  MORRIS FOSTER LUTHER ,  RUDOLPH LORENZ MAX

IPC: C30B19/06 ,  H01L21/208 ,  H01L33/30 ,  H01L7/38

Abstract: GaP is epitaxially deposited from a solution of GaP in Ga on to a highly polished surface of a GaP substrate. In the embodiment the substrate is placed in a quartz boat together with a mixture of Ga and GaP. The boat is heated to 800-1200 DEG C. (preferably 1150 DEG C.) in an atmosphere of N2 + H2 to melt and homogenize the mixture and thus to form a solution of GaP in Ga. The furnace containing the boat is tilted to cause the solution to flow over the GaP substrate, and the temperature is maintained for 5 minutes, after which the arrangement is cooled slowly to 700 DEG C., then more rapidly to room temperature. Excess Ga is lapped and etched away.