公开(公告)号：DE1589196A1

公开(公告)日：1970-02-26

申请号：DE1589196

申请日：1967-09-13

Applicant: IBM

Inventor： JOSEPH BUSZKO LEONARD ,  MORRIS FOSTER LUTHER ,  RUDOLPH LORENZ MAX

IPC: C30B19/06 ,  H01L21/208 ,  H01L33/30 ,  H01L7/38

Abstract: GaP is epitaxially deposited from a solution of GaP in Ga on to a highly polished surface of a GaP substrate. In the embodiment the substrate is placed in a quartz boat together with a mixture of Ga and GaP. The boat is heated to 800-1200 DEG C. (preferably 1150 DEG C.) in an atmosphere of N2 + H2 to melt and homogenize the mixture and thus to form a solution of GaP in Ga. The furnace containing the boat is tilted to cause the solution to flow over the GaP substrate, and the temperature is maintained for 5 minutes, after which the arrangement is cooled slowly to 700 DEG C., then more rapidly to room temperature. Excess Ga is lapped and etched away.

公开(公告)号：DE1544206A1

公开(公告)日：1970-07-02

申请号：DE1544206

申请日：1966-03-14

Applicant: IBM

Inventor： MORRIS FOSTER LUTHER ,  EDWARD SCARDEFIELD JOHN

IPC: H01L21/00 ,  H01L33/00 ,  H01L7/32

Abstract: A gallium phosphide light emitting junction diode is produced by heating a solution of gallium, gallium phosphide and shallow acceptor and donor dopants in the absence of oxygen and cooling to provide dendritic crystal growth with PN junctions. In the embodiment gallium and gallium phosphide in the weight ratio of 10 : 1 are heated in a tube 1 for degassing and donor and acceptor dopants from depression 3 of the tube are then added; the acceptor may consist of zinc or cadmium and the donor of sulphur, selenium or tellurium. The tube is sealed, heated to 1120 DEG C. for 2 hours and cooled slowly ( 1/2 to 2 hours) so that segregation occurs to provide NPN crystals; excess gallium is removed by dissolving in hot hydrochloric acid. Contacts are made by alloying a zinc gold alloy through the thin N-type layer to the central P region and by alloying tin and gold to the other N-type region, as shown in Fig. 3b. Alternatively the thin N-type layer can be removed by etching. The device emits light at 5680 rA.