公开(公告)号：DE1809303A1

公开(公告)日：1969-08-14

申请号：DE1809303

申请日：1968-11-16

Applicant: IBM

Inventor： RUDOLPH LORENZ MAX ,  ONTON AARE

IPC: E03F5/04 ,  H01L21/00 ,  H01L21/22 ,  H01L33/00 ,  H01L7/34

Abstract: 1,173,850. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 20 Nov., 1968 [1 Dec., 1967], No. 54989/68. Heading H1K. In a method of manufacturing a radiationemitting device, having a semi-conductor region wherein recombination radiation is generated in a first frequency band associated with a paired state of acceptor and donor impurities in the semi-conductor region and in a second frequency band associated with a dissociated state of acceptor and donor impurities in the semiconductor region, the device is heat treated within such a temperature range and for such a time that the proportion of impurities in the state which gives rise to a higher efficiency in the required radiation band is increased. In particular in a gallium phosphide semi-conductor region doped with zinc and oxygen to form a PN diode the efficiency of the visible radiation emission can be increased by heat treatment in the range between 450‹ C. and 700‹ C. for from 4 minutes to 3 hours. The temperature during the heat treatment need not be constant, but the treatment may proceed in stages at fixed temperature values within the specified range. Other impurities used to dope the semi-conductor are zinc and sulphur, cadmium and oxygen, and carbon and oxygen, the acceptor impurity being present in a higher concentration than the donor impurity.

公开(公告)号：DE1965015A1

公开(公告)日：1970-07-16

申请号：DE1965015

申请日：1969-12-27

Applicant: IBM

Inventor： RUDOLPH LORENZ MAX ,  CLEARY MCGRODDY JAMES

IPC: H01L47/00 ,  H03B9/12 ,  H01L9/00

公开(公告)号：DE1589196A1

公开(公告)日：1970-02-26

申请号：DE1589196

申请日：1967-09-13

Applicant: IBM

Inventor： JOSEPH BUSZKO LEONARD ,  MORRIS FOSTER LUTHER ,  RUDOLPH LORENZ MAX

IPC: C30B19/06 ,  H01L21/208 ,  H01L33/30 ,  H01L7/38

Abstract: GaP is epitaxially deposited from a solution of GaP in Ga on to a highly polished surface of a GaP substrate. In the embodiment the substrate is placed in a quartz boat together with a mixture of Ga and GaP. The boat is heated to 800-1200 DEG C. (preferably 1150 DEG C.) in an atmosphere of N2 + H2 to melt and homogenize the mixture and thus to form a solution of GaP in Ga. The furnace containing the boat is tilted to cause the solution to flow over the GaP substrate, and the temperature is maintained for 5 minutes, after which the arrangement is cooled slowly to 700 DEG C., then more rapidly to room temperature. Excess Ga is lapped and etched away.