公开(公告)号：JP2001308480A

公开(公告)日：2001-11-02

申请号：JP2001054795

申请日：2001-02-28

Applicant: IBM

Inventor： ADVOCATE JR GERALD G ,  DONS FRANCIS J JR ,  MATIENZO LUIS J ,  KASCHAK RONALD A ,  JOHN S KURESUGE ,  VAN HART DANIEL C

IPC: C23C18/18 ,  C25D7/00 ,  H01L21/60 ,  H01L23/498 ,  H01L23/522 ,  H05K1/11 ,  H05K3/00 ,  H05K3/02 ,  H05K3/06 ,  H05K3/38 ,  H05K3/42 ,  H05K3/46

Abstract: PROBLEM TO BE SOLVED: To provide an electronic structure having a conductive plating layer where adhesion of plating is enhanced. SOLUTION: A substrate having a metal sheet in a dielectric layer is used. The metal sheet contains a metal, e.g. copper. An opening, e.g. a blind via, is made in the substrate by laser drilling passing through a part of the dielectric layer and the metal sheet. Surface (blind surface) beneath the opening includes a metal protrusion formed by laser drilling and the metal protrusion is integrated with the blind surface. The metal protrusion contains the metal of the metal sheet and at least one component from the dielectric layer. Subsequently, the metal protrusion is etched to form a metal interlock structure integral with a part of the blind surface. A conductive metal is stuck into the opening including the metal interlock structure by plating.

公开(公告)号：CA1223157A

公开(公告)日：1987-06-23

申请号：CA499458

申请日：1986-01-13

Applicant: IBM

Inventor： KASCHAK RONALD A ,  MAGNUSON ROY H ,  YARMCHUK EDWARD J

IPC: H05K3/18 ,  C23C18/16 ,  C23C18/31 ,  C23C18/40

Abstract: Method for controlling plating in an electroless plating process. The plating rate is continuously monitored. The plating rate is compared with a set point plating rate. A control voltage is derived proportional to the difference in plating rate and the desired plating rate, the integral of the difference, and the derivative of the difference. The control voltage is applied to a replenishment control for controlling the replenishment rate of a constituent chemical of the plating process.