公开(公告)号：GB2517697A

公开(公告)日：2015-03-04

申请号：GB201315208

申请日：2013-08-27

Applicant: IBM

Inventor： ABEL STEFAN ,  CZORNOMAZ LUKAS ,  KAZZI MARIO EL ,  FOMPEYRINE JEAN

IPC: H01L21/02

Abstract: A semiconductor structure 1 comprises a substrate 2 comprising a first crystalline semiconductor material, a dielectric layer 3 is positioned above the substrate 2 and defines an opening 4, a second crystalline semiconductor material 9 can then at least partially fill the opening 4. A crystalline interlayer 8 is formed between the substrate 2 and the second crystalline semiconductor material 9. The first crystalline semiconductor material and the second crystalline semiconductor material 9 are lattice mismatched, and the crystalline interlayer 8 comprises an oxygen compound. The dielectric layer can partially cover the substrate and the dielectric trenches can be non crystalline. The second semiconductor material can be a crystalline semiconductor including the III-V, II-VI and the IV-IV family of semiconductor materials. The interlayer structure may comprise a diffusion barrier layer or comprise a multilayer structure. It can have metallic conductivity or comprise an insulating material. The second crystalline material can be grown on the interlayer by forming islands of the semiconductor material on the crystalline interlayer.