公开(公告)号：GB2504160B

公开(公告)日：2014-10-29

申请号：GB201221564

申请日：2012-11-30

Applicant: IBM

Inventor： CAI MING ,  YEH CHUN-CHEN ,  GUO DECHAO ,  KERBER PRANITA

IPC: H01L29/78

公开(公告)号：GB2504160A

公开(公告)日：2014-01-22

申请号：GB201221564

申请日：2012-11-30

Applicant: IBM

Inventor： CAI MING ,  YEH CHUN-CHEN ,  GUO DECHAO ,  KERBER PRANITA

IPC: H01L29/78

Abstract: Multigate transistor (MuGFET) devices comprising, a fin and a gate structure 704, that is disposed on a top and side surfaces of the fin, are formed and a portion of a lower portion of the fin is removed to form recesses below the gate structure, and below a channel region 802 of the fin. The recesses define angled indentations below the channel region in which SiGe source/drain extension regions 1202 are epitaxially regrown. The source/drain extensions apply a stress on the channel region to enhance charge carrier mobility in the channel region.