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公开(公告)号：DE2627987A1
公开(公告)日：1977-01-20
申请号：DE2627987
申请日：1976-06-23
Applicant: IBM
Inventor： KO WEN CHUANG , SCHIEN ALBERT , WINNARD JAMES ROBERT
IPC: G01Q60/00 , G21K1/02 , H01J37/317 , H01J37/30 , H01L21/265
Abstract: In an ion implantation apparatus, means for forming multiple, separate parallel ion beams, each having a predetermined spot diameter, and means for focusing each of said ion beams upon a predetermined chip area of a target wafer whereby multiple chip areas upon the wafer can be simultaneously implanted with prescribed ion dosages.
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