公开(公告)号：FR2316724A1

公开(公告)日：1977-01-28

申请号：FR7615570

申请日：1976-05-17

Applicant: IBM

Inventor： KO WEN C ,  SCHIEN ALBERT ,  WINNARD JAMES R

IPC: G01Q60/00 ,  G21K1/02 ,  H01J37/317 ,  H01J37/30 ,  H01L21/265 ,  H01L21/425

Abstract: In an ion implantation apparatus, means for forming multiple, separate parallel ion beams, each having a predetermined spot diameter, and means for focusing each of said ion beams upon a predetermined chip area of a target wafer whereby multiple chip areas upon the wafer can be simultaneously implanted with prescribed ion dosages.

公开(公告)号：DE2627987A1

公开(公告)日：1977-01-20

申请号：DE2627987

申请日：1976-06-23

Applicant: IBM

Inventor： KO WEN CHUANG ,  SCHIEN ALBERT ,  WINNARD JAMES ROBERT

IPC: G01Q60/00 ,  G21K1/02 ,  H01J37/317 ,  H01J37/30 ,  H01L21/265

Abstract: In an ion implantation apparatus, means for forming multiple, separate parallel ion beams, each having a predetermined spot diameter, and means for focusing each of said ion beams upon a predetermined chip area of a target wafer whereby multiple chip areas upon the wafer can be simultaneously implanted with prescribed ion dosages.