公开(公告)号：DE2623207A1

公开(公告)日：1977-01-27

申请号：DE2623207

申请日：1976-05-24

Applicant: IBM

Inventor： COULTAS DENNIS KEITH ,  KELLER JOHN HOWARD ,  WINNARD JAMES ROBERT

IPC: G21K1/087 ,  H01J37/147 ,  H01J37/317 ,  H01L21/265 ,  H05H7/00 ,  H01J27/00

Abstract: A novel method and apparatus for achieving electrostatic deflection of high current ion beams within a scanning apparatus. In one embodiment, a pair of gates are provided, with one gate being oriented proximate each side of the deflection plates, and each gate being biased to a negative voltage of a sufficient amplitude to repel electrons which otherwise would be attracted to the positively-biased deflection plates to thereby protect the electron cloud from degradation, and maintain space charge neutralization of the ion beam. In another embodiment, means are provided to drive the deflection plates at negative voltages at all times and to maintain portions of the ground tube of the apparatus adjacent the deflection plates at a ground or negative level in order to avoid degradation of the electron sheath.

公开(公告)号：DE3473968D1

公开(公告)日：1988-10-13

申请号：DE3473968

申请日：1984-05-09

Applicant: IBM

Inventor： KELLER JOHN HOWARD ,  WINNARD JAMES ROBERT

IPC: H01J37/12 ,  H01J37/04 ,  H01J37/10 ,  H01J37/147 ,  H01J37/30 ,  H01J37/21

公开(公告)号：DE1270097B

公开(公告)日：1968-06-12

申请号：DE1270097

申请日：1964-12-03

Applicant: IBM

Inventor： BAXTER DUANE WILLARD ,  FELTON BRUCE CHARLES ,  WERNER ANTON ,  WINNARD JAMES ROBERT

IPC: H03K3/315 ,  H04L25/04

公开(公告)号：DE2862399D1

公开(公告)日：1984-06-07

申请号：DE2862399

申请日：1978-12-02

Applicant: IBM

Inventor： KELLER JOHN HOWARD ,  MCKENNA CHARLES MICHAEL ,  WINNARD JAMES ROBERT

IPC: H01L21/268 ,  C30B23/04 ,  C30B23/08 ,  H01J37/30 ,  H01J37/317 ,  H01L21/20 ,  H01L21/203 ,  C30B23/02 ,  H01L21/26

公开(公告)号：DE2627987A1

公开(公告)日：1977-01-20

申请号：DE2627987

申请日：1976-06-23

Applicant: IBM

Inventor： KO WEN CHUANG ,  SCHIEN ALBERT ,  WINNARD JAMES ROBERT

IPC: G01Q60/00 ,  G21K1/02 ,  H01J37/317 ,  H01J37/30 ,  H01L21/265

Abstract: In an ion implantation apparatus, means for forming multiple, separate parallel ion beams, each having a predetermined spot diameter, and means for focusing each of said ion beams upon a predetermined chip area of a target wafer whereby multiple chip areas upon the wafer can be simultaneously implanted with prescribed ion dosages.