公开(公告)号：AT416399T

公开(公告)日：2008-12-15

申请号：AT06793243

申请日：2006-09-05

Applicant: IBM

Inventor： KOBURGER III ,  HOLMES STEVEN ,  HORAK DAVID ,  KIMMEL KURT ,  PETRILLO KAREN ,  ROBINSON CHRISTOPHER

IPC: G03F7/20

Abstract: An article including a microelectronic substrate is provided as an article usable during the processing of the microelectronic substrate. Such article includes a microelectronic substrate having a front surface, a rear surface opposite the front surface and a peripheral edge at boundaries of the front and rear surfaces. The front surface is a major surface of the article. A removable annular edge extension element having a front surface, a rear surface and an inner edge extending between the front and rear surfaces has the inner edge joined to the peripheral edge of the microelectronic substrate. In such way, a continuous surface is formed which includes the front surface of the edge extension element extending laterally from the peripheral edge of the microelectronic substrate and the front surface of the microelectronic substrate, the continuous surface being substantially co-planar and flat where the peripheral edge is joined to the inner edge.

公开(公告)号：AT398834T

公开(公告)日：2008-07-15

申请号：AT05717124

申请日：2005-03-22

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  KOBURGER III ,  SLINKMAN JAMES

IPC: H01L21/84 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786

Abstract: A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.