公开(公告)号：CA1034683A

公开(公告)日：1978-07-11

申请号：CA231476

申请日：1975-07-15

Applicant: IBM

Inventor： KOENIG WILFRIED G ,  MAKRIS JAMES S ,  MASTERS BURTON J

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/331 ,  H01L21/74

Abstract: A method of ion implantation into a semiconductor substrate which comprises forming a layer of an electrically insulative material, such as silicon dioxide, on the substrate over the region to be ion implanted. Then, a beam of ions having sufficient energy to pass through the layer of insulative material and to penetrate into the substrate is directed at a particular portion of the insulative layer. Before proceeding further, at least the upper half of the insulative layer, and preferably all of the upper portion of the insulative layer, in excess of a remaining thickness of 100A, is removed by etching. Then, the substrate is heated whereby the ions are driven further into the substrate to form the selected ion implanted region.

公开(公告)号：CH594987A5

公开(公告)日：1978-01-31

申请号：CH790175

申请日：1975-06-18

Applicant: IBM

Inventor： KOENIG WILFRIED G ,  MARKIS JAMES S ,  MASTERS BURTON J

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/331 ,  H01L21/74 ,  H01L21/425

Abstract: A method of ion implantation into a semiconductor substrate which comprises forming a layer of an electrically insulative material, such as silicon dioxide, on the substrate over the region to be ion implanted. Then, a beam of ions having sufficient energy to pass through the layer of insulative material and to penetrate into the substrate is directed at a particular portion of the insulative layer. Before proceeding further, at least the upper half of the insulative layer, and preferably all of the upper portion of the insulative layer, in excess of a remaining thickness of 100A, is removed by etching. Then, the substrate is heated whereby the ions are driven further into the substrate to form the selected ion implanted region.

公开(公告)号：FR2279223A1

公开(公告)日：1976-02-13

申请号：FR7518145

申请日：1975-06-03

Applicant: IBM

Inventor： KOENIG WILFRIED G ,  MAKRIS JAMES S ,  MASTERS BURTON J

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/331 ,  H01L21/74

Abstract: A method of ion implantation into a semiconductor substrate which comprises forming a layer of an electrically insulative material, such as silicon dioxide, on the substrate over the region to be ion implanted. Then, a beam of ions having sufficient energy to pass through the layer of insulative material and to penetrate into the substrate is directed at a particular portion of the insulative layer. Before proceeding further, at least the upper half of the insulative layer, and preferably all of the upper portion of the insulative layer, in excess of a remaining thickness of 100A, is removed by etching. Then, the substrate is heated whereby the ions are driven further into the substrate to form the selected ion implanted region.