公开(公告)号：DE4221575A1

公开(公告)日：1994-01-05

申请号：DE4221575

申请日：1992-07-01

Applicant: IBM

Inventor： KOETZLE GUENTHER ,  KREUTER VOLKER ,  LUDWIG THOMAS ,  SCHETTLER HELMUT

IPC: G05F3/20 ,  H01L27/02 ,  H01L23/58 ,  H01L27/092 ,  G11C5/14 ,  G06F1/32

Abstract: An integrated CMOS semiconductor circuit to reduce power consumption in which at least one transistor pair can be operated stably at different supply voltage in that each supply voltage is allocated a threshold voltages which is adjustable via the trough and substrate bias voltages. The substrate of the transistor pair is connected to a substrate bias voltage generator circuit and the trough to a trough bias voltage generator circuit which, dependently upon an input signal representing the height of the supply voltage, sets the height of the bias voltage corresponding to the supply voltage in order to match the threshold voltage to the supply voltage concerned in such a way that the stable operation of the transistor pair is ensured at all times. A data processing system associated to the integrated semiconductor circuit, which, for example, operates at a supply voltage of 3.6 V, a clock frequency of 66 MHz and a relative power consumption of 1, after switching over to a supply voltage of 1.2 V and a clock frequency of below 5 MHz/attains a power consumption of less than 0.01 and an approximately hundredfold increase in the running time for a battery-operated PC.

公开(公告)号：DE4221575C2

公开(公告)日：1995-02-09

申请号：DE4221575

申请日：1992-07-01

Applicant: IBM

Inventor： KOETZLE GUENTHER ,  KREUTER VOLKER ,  LUDWIG THOMAS ,  SCHETTLER HELMUT

IPC: G05F3/20 ,  H01L27/02 ,  H01L23/58 ,  H01L27/092 ,  G11C5/14 ,  G06F1/32

Abstract: PCT No. PCT/DE93/00443 Sec. 371 Date Jul. 17, 1995 Sec. 102(e) Date Jul. 17, 1995 PCT Filed May 21, 1993 PCT Pub. No. WO94/01890 PCT Pub. Date Jan. 20, 1994An integrated semiconductor circuit for reducing power consumption, employing CMOS technology in which a transistor pair can be operated stably at different supply voltages. At each supply voltage the transistors have an associated threshold voltage which can be set via the well and substrate bias voltages. The substrate of the transistor pair is connected to a substrate bias voltage generator circuit and the well is connected to a well bias voltage generator circuit. An input signal representing the level of the supply voltage sets the respective bias voltages corresponding to the level of the supply voltage. Thus, the threshold voltage of each transistor is adapted to the existing supply voltage, thereby ensuring stable operation of the transistor pair. A battery driven data processing system with the integrated semiconductor circuit can attain an approximate 100 fold extension of the operating time of the battery.