公开(公告)号：JPS6189646A

公开(公告)日：1986-05-07

申请号：JP10412685

申请日：1985-05-17

Applicant: Ibm

Inventor： KONSUTANSU JIYOON ARAPUSU ,  SUCHIIBUN EMU KANDETSUKU ,  EREN RUISU KATSUTONAA ,  AAKU ANSONII TAKAKUSU

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/312

Abstract: A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.

公开(公告)号：JPS6197930A

公开(公告)日：1986-05-16

申请号：JP15715085

申请日：1985-07-18

Applicant: Ibm

Inventor： KONSUTANSU JIYOON ARAPUSU ,  JIYOOJI CHIYOONNIYU ,  SUCHIIBUN EMU KANDETSUKE ,  MAAKU ANSONII TAKAKUSU

IPC: C08G73/10 ,  H01L21/31 ,  H01L21/312 ,  H01L21/762

CPC classification number: H01L21/312 ,  C08G73/1071 ,  H01L21/76224 ,  Y10T428/2457

Abstract: The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imids or mixtures thereof, wherein the end groups of the polymerizable oligomer are end capped with a vinyl or acetylinic end group.

公开(公告)号：JPS6043832A

公开(公告)日：1985-03-08

申请号：JP7766684

申请日：1984-04-19

Applicant: IBM

Inventor： HAABAATO RUDORUFU ANDAASON JIY ,  KONSUTANSU JIYOON ARAPUSU ,  KIYASARIN AGUNESU ROTSUKO

IPC: H01L21/28 ,  C23C14/04 ,  G03F7/039 ,  G03F7/36 ,  H01L21/302 ,  H01L21/3065

公开(公告)号：JPH0344091A

公开(公告)日：1991-02-25

申请号：JP16006590

申请日：1990-06-20

Applicant: IBM

Inventor： SHIIIREI CHIENGU ,  KONSUTANSU JIYOON ARAPUSU ,  AREN JIYOSEFU AANORUDO ,  JIEFURII TOOMASU KOFUIN ,  RUU SAAN NIYUUEN

IPC: C11D7/50 ,  C23F11/12 ,  C23F11/14 ,  C23F15/00 ,  H01L21/304 ,  H01L21/306 ,  H05K3/26

Abstract: PURPOSE: To improve corrosion suppression power in a package by cleaning electronic components with a crown compd. soln. CONSTITUTION: Electronic components are cleaned in a soln. composed of a crown compd. complexing agent and solvent for dissolving this agent which is selected among crown ether, cryptate ether and their mixtures such that if making a complex with cations (e.g. Na or K), crown ether is pref., while if making a complex with anions (e.g. Cl), cryptate ether is pref. The crown ether may be an aliphatic crown ether (Formula I), aromatic crown ether (Formula II) or cyclic oligomer of ethylene oxide (Formula III). The cryptate may be a monocyclic (IV) or polycyclic (V) one.

公开(公告)号：JPS62191460A

公开(公告)日：1987-08-21

申请号：JP200387

申请日：1987-01-09

Applicant: IBM

Inventor： HAABAATO RUDORUFU ANDAASON JIY ,  KONSUTANSU JIYOON ARAPUSU ,  RENAKA SHIYASUTORI DEIBUAKARUN ,  DANIERU PATORITSUKU KAABII ,  ROBAATO UORUFU NIYUFUAA ,  HAABANSU SHIN SACHIDEBU ,  KURISHIYUNA GANJII SACHIDEBU ,  TAABA SARIYANARAYANA ,  SUTOOYAN MASHIASU ZARAA

IPC: C03C10/00 ,  C04B35/622 ,  C04B35/628 ,  C04B35/63 ,  C04B35/632 ,  C04B35/634 ,  H01L21/48 ,  H05K1/03