公开(公告)号：BR8903288A

公开(公告)日：1990-02-13

申请号：BR8903288

申请日：1989-07-04

Applicant: IBM

Inventor： KUECH THOMAS FRANCIS ,  TISCHLER MICHAEL ALBERT

IPC: H01L21/205 ,  C30B25/02 ,  H01L21/20

公开(公告)号：DE3571721D1

公开(公告)日：1989-08-24

申请号：DE3571721

申请日：1985-07-23

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  KUECH THOMAS FRANCIS

IPC: H01L21/28 ,  G02B6/13 ,  H01L21/033 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/338 ,  H01L29/812 ,  H01S5/00 ,  H01S5/02 ,  H01L21/31

Abstract: A portion of a first layer (14; 34) exposed through an opening (20; 40) in a second layer (18; 38) is chemically converted to a compound having properties different to those of the first layer. By arranging that the conversion to the compound extends beyond the boundary of the opening and removing the compound, further material (24) can be depositied onto the substrate (12) through the opening (20). In this manner, a self-aligned semiconductor device can be formed with the further material (24) serving as the gate of the device. If the conversion to the compound is limited to the portion of the first layer directly below the opening (40) and the compound has an index of refraction different from that of the first layer, the converted portion (36) can serve as an optical waveguide.

公开(公告)号：DE3469303D1

公开(公告)日：1988-03-17

申请号：DE3469303

申请日：1984-11-06

Applicant: IBM

Inventor： KUECH THOMAS FRANCIS ,  MEYERSON BERNARD STEELE

IPC: H01L21/205 ,  C30B25/02

Abstract: A gaseous hydride based silicon compound having a molecule containing at least two silicon atoms, such as Si2H6 to Si5H12, is used as a source of silicon in a metal organic chemical vapour deposition process for epitaxially depositing a silicon doped intermetallic semiconductor compound such as GaAs or GaA1As.

公开(公告)号：DE3675281D1

公开(公告)日：1990-12-06

申请号：DE3675281

申请日：1986-06-03

Applicant: IBM

Inventor： KASH JEFFREY ALAN ,  KUECH THOMAS FRANCIS

IPC: H01L31/0264 ,  H01L21/205 ,  H01L31/00 ,  H01L31/0368 ,  H01L31/08 ,  H01L31/18

Abstract: Picosecond response photoconductors and photoresponsive elements can be provided that retain high carrier mobility and yet have short lifetime by providing on a crystal mismatched substrate (1) a textured layer (2) of domain regions (3) wherein the domain size is such that the lifetime (t) is proportional to the square of the size (S²) divided by the diffusion coefficient (D) of the semiconductor (i.e. t ≈ S²/D) material. The crystalline orientation in the domains with respect to the substrate is maintained. An embodiment is an approximately 0.1 micron thick textured layer of GaAs (2) grown on a hexagonal monocrystalline Al₂O₃ substrate (1) having domains approximately 1.0 micron with a carrier lifetime about 5 picoseconds and a carrier mobility of about 80 cm² volt⁻¹ sec⁻¹.

公开(公告)号：DE3569435D1

公开(公告)日：1989-05-18

申请号：DE3569435

申请日：1985-07-09

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  KUECH THOMAS FRANCIS

IPC: H01L21/26 ,  H01L21/265 ,  H01L21/268 ,  H01L21/324

Abstract: An ion implanted gallium arsenide substrate is annealed by maintaining it at a temperature above about 400 DEG C in an arsenic-containing gaseous ambient on all sides of the substrate, and heating the gallium arsenide substrate with broad area incoherent light.

公开(公告)号：DE3565861D1

公开(公告)日：1988-12-01

申请号：DE3565861

申请日：1985-07-09

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  KUECH THOMAS FRANCIS

IPC: C23C14/06 ,  C23C14/58 ,  H01L21/265 ,  H01L21/324 ,  C23C14/48