公开(公告)号：DE3476492D1

公开(公告)日：1989-03-02

申请号：DE3476492

申请日：1984-08-23

Applicant: IBM

Inventor： GAIND ARUN KUMAR ,  KULKARNI SUBHASH BALKRISHNA ,  POPONIAK MICHAEL ROBERT

IPC: H01L21/205 ,  H01L21/22 ,  H01L21/74 ,  H01L21/34

Abstract: A reduced pressure epitaxial deposition method is disclosed to maximize performance and leakage limited yield of devices formed in the epitaxial layer. The method includes specified prebake and deposition conditions designed to minimize arsenic (buried subcollector) and boron (buried isolation) autodoping effects when pressures below one atmosphere are selected in accordance with the subcollector-to-isolation area ratio.