公开(公告)号：JP2000260999A

公开(公告)日：2000-09-22

申请号：JP2000050047

申请日：2000-02-25

Applicant: IBM

Inventor： CHONDROUDIS KONSTANTINOS ,  DIMITRAKOPOULOS CHRISTOS D ,  KAGAN CHERIE R ,  KYMISSIS IOANNIS ,  DAVID B MITSUI

IPC: H01L27/12 ,  H01L21/02 ,  H01L27/088 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: PROBLEM TO BE SOLVED: To provide an FET structure which uses an organic/inorganic by hybrid material as a semiconductor channel. SOLUTION: This FET structure uses an organic/inorganic hybrid material 32 as a semiconductor channel between a source electrode 34 and a drain electrode 36 in a device. The organic/inorganic material has advantages of an inorganic crystalline solid and an organic material. The inorganic element forms an extended inorganic one-dimensional, two-dimensional or three- dimensional network, and provides a high carrier mobility for an inorganic crystalline solid. The organic element promotes self assembly of these materials and permits adhesion of the materials under conditions of simple low- temperature treatment such as spin coating, dipping coating, thermal vapor- deposition, etc. In addition, the organic element is used to adjust the electronic characteristics of inorganic skeleton, by defining the dimension of the inorganic element and the electronic bonding between inorganic units.

公开(公告)号：DE10006257A1

公开(公告)日：2000-09-14

申请号：DE10006257

申请日：2000-02-11

Applicant: IBM

Inventor： CHONDROUDIS KONSTANTINOS ,  DIMITRAKOPOULOS CHRISTOS D ,  KAGAN CHERIE R ,  KYMISSIS IOANNIS

IPC: H01L27/12 ,  H01L21/02 ,  H01L27/088 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/20

Abstract: Field effect transistor has a channel layer between source (34) and drain (36) regions, a gate region (40) arranged next to the channel layer, and an electrically insulating layer (38) between the gate region and the source region, the drain region and the channel layer. The channel layer (32) contains a semiconducting inorganic-organic hybrid material.

公开(公告)号：DE10006257B8

公开(公告)日：2006-12-14

申请号：DE10006257

申请日：2000-02-11

Applicant: IBM

Inventor： CHONDROUDIS KONSTANTINOS ,  DIMITRAKOPOULOS CHRISTOS D ,  KAGAN CHERIE R ,  KYMISSIS IOANNIS

IPC: H01L27/12 ,  H01L51/05 ,  H01L21/02 ,  H01L27/088 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/30

Abstract: An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an organic material. The inorganic component forms an extended, inorganic one-, two-, or three-dimensional network to provide the high carrier mobilities characteristic of inorganic, crystalline solids. The organic component facilitates the self-assembly of these materials and enables the materials to be deposited by simple, low temperature processing conditions such as spin-coating, dip-coating, or thermal evaporation. The organic component is also used to tailor the electronic properties of the inorganic framework by defining the dimensionality of the inorganic component and the electronic coupling between inorganic units.

公开(公告)号：DE10006257B4

公开(公告)日：2006-06-29

申请号：DE10006257

申请日：2000-02-11

Applicant: IBM

Inventor： CHONDROUDIS KONSTANTINOS ,  DIMITRAKOPOULOS CHRISTOS D ,  KAGAN CHERIE R ,  KYMISSIS IOANNIS

IPC: H01L27/12 ,  H01L51/05 ,  H01L21/02 ,  H01L27/088 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/30

Abstract: An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an organic material. The inorganic component forms an extended, inorganic one-, two-, or three-dimensional network to provide the high carrier mobilities characteristic of inorganic, crystalline solids. The organic component facilitates the self-assembly of these materials and enables the materials to be deposited by simple, low temperature processing conditions such as spin-coating, dip-coating, or thermal evaporation. The organic component is also used to tailor the electronic properties of the inorganic framework by defining the dimensionality of the inorganic component and the electronic coupling between inorganic units.