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    ACTIVE DEVICES USING THREADS
    1.
    发明公开
    ACTIVE DEVICES USING THREADS 审中-公开
    有源器件的使用线程的

    公开(公告)号：EP1390991A4

    公开(公告)日：2007-10-31

    申请号：EP02731116

    申请日：2002-03-08

    Applicant: IBM

    Inventor： SOLOMON PAUL MICHAEL ,  SHAW JANE MARGARET ,  KAGAN CHERIE R ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  NING TAK HUNG

    IPC: D02G3/44 ,  H01L29/06 ,  H01L29/786 ,  H01L41/08 ,  H01L41/113 ,  H01L51/00 ,  H01L51/05 ,  H01L35/24 ,  B32B27/12 ,  H05B33/02

    CPC classification number: D02G3/441 ,  H01L29/0657 ,  H01L51/0036 ,  H01L51/0512 ,  H02N2/18

    Abstract: Active devices that have either a thread or a ribbon geometry. The thread geometry includes single thread active devices and multiply thread devices. Single thread devices have a central core that may contain different materials depending upon whether the active device is responsive to electrical, light, mechanical, heat, or chemical energy. Single thread active devices include FETs, electro optical devices, stress transducers, and the like. The active devices include a semiconductor body that for the single thread device is a layer about the core of the thread. For the multiple thread devices, the semiconductor body is either a layer on one or more thread or an elongated body disposed between two of the threads. For example, a FET (50) is formed of three threads, of which carried a gate insulator layer (74) and a semiconductor layer (72) and the other two (58,60) of which are electrically conductive and serve as the source (58) and drain (60). The substrates or threads are preferably flexible and can be formed in a fabric.

    THIN-FILM TRANSISTOR HAVING ORGANIC/INORGANIC MATERIAL AS SEMICONDUCTOR CHANNEL
    2.
    发明专利
    THIN-FILM TRANSISTOR HAVING ORGANIC/INORGANIC MATERIAL AS SEMICONDUCTOR CHANNEL 失效

    公开(公告)号：JP2000260999A

    公开(公告)日：2000-09-22

    申请号：JP2000050047

    申请日：2000-02-25

    Applicant: IBM

    Inventor： CHONDROUDIS KONSTANTINOS ,  DIMITRAKOPOULOS CHRISTOS D ,  KAGAN CHERIE R ,  KYMISSIS IOANNIS ,  DAVID B MITSUI

    IPC: H01L27/12 ,  H01L21/02 ,  H01L27/088 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

    Abstract: PROBLEM TO BE SOLVED: To provide an FET structure which uses an organic/inorganic by hybrid material as a semiconductor channel. SOLUTION: This FET structure uses an organic/inorganic hybrid material 32 as a semiconductor channel between a source electrode 34 and a drain electrode 36 in a device. The organic/inorganic material has advantages of an inorganic crystalline solid and an organic material. The inorganic element forms an extended inorganic one-dimensional, two-dimensional or three- dimensional network, and provides a high carrier mobility for an inorganic crystalline solid. The organic element promotes self assembly of these materials and permits adhesion of the materials under conditions of simple low- temperature treatment such as spin coating, dipping coating, thermal vapor- deposition, etc. In addition, the organic element is used to adjust the electronic characteristics of inorganic skeleton, by defining the dimension of the inorganic element and the electronic bonding between inorganic units.

    FORMATION OF CARBON AND SEMICONDUCTOR NANOMATERIALS USING MOLECULAR ASSEMBLIES
    3.
    发明申请
    FORMATION OF CARBON AND SEMICONDUCTOR NANOMATERIALS USING MOLECULAR ASSEMBLIES 审中-公开
    使用分子组装法制备碳和半导体纳米材料

    公开(公告)号：WO2008066947A2

    公开(公告)日：2008-06-05

    申请号：PCT/US2007068196

    申请日：2007-05-04

    Applicant: IBM ,  AFZALI-ARDAKANI ALI ,  KAGAN CHERIE R ,  KOSBAR LAURA L

    Inventor： AFZALI-ARDAKANI ALI ,  KAGAN CHERIE R ,  KOSBAR LAURA L

    IPC: H01L21/336

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C30B25/00 ,  C30B29/02 ,  C30B29/60 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/78681 ,  H01L29/78684 ,  Y10S977/762 ,  Y10S977/84 ,  Y10S977/89 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938

    Abstract: The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.

    Abstract translation: 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。

    ACTIVE DEVICES USING THREADS
    8.
    发明专利
    ACTIVE DEVICES USING THREADS 未知

    公开(公告)号：MY136302A

    公开(公告)日：2008-09-30

    申请号：MYPI20021594

    申请日：2002-04-30

    Applicant: IBM

    Inventor： SOLOMON PAUL M ,  SHAW JANE MARGARET ,  KAGAN CHERIE R ,  DIMITRAKOPOULOS CHRISTOS DIMITRIOS ,  NING TAK HUNG

    IPC: D02G3/44 ,  H01L29/06 ,  H01L29/786 ,  H01L41/08 ,  H01L41/113 ,  H01L51/00 ,  H01L51/05

    Abstract: ACTIVE DEVICES THAT HAVE EITHER A THREAD OR A RIBBON GEOMETRY. THE THREAD GEOMETRY INCLUDES SINGLE THREAD ACTIVE DEVICES (105,170,190) AND MULTIPLE THREAD DEVICES(50,90,100,120,140). SINGLE THREAD DEVICES HAVE A CENTRAL CORE (154,174,194) THAT MAY CONTAIN DIFFERENT MATERIALS DEPENDING UPON WHETHER THE ACTIVE DEVICE IS RESPONSIVE TO ELECTRICAL, LIGHT, MECHANICAL, HEAT, OR CHEMICAL ENERGY. SINGLE THREAD ACTIVE DEVICES INCLUDE FETS, ELECTRO-OPTICAL DEVICES, STRESS TRANSDUCERS, AND THE LIKE. THE ACTIVE DEVICES INCLUDE A SEMICONDUCTOR BODY (158,176,196) THAT FOR THE SINGLE THREAD DEVICES IS A LAYER ABOUT THE CORE OF THE THREAD. FOR THE MULTIPLE THREAD DEVICES, THE SEMICONDUCTOR BODY IS EITHER A LAYER(72,76,78,80) ON ONE OR MORE OF THE THREADS OR AN ELONGATED BODY(110,130) DISPOSED BETWEEN TWO OF THE THREADS. FOR EXAMPLE, A FET IS FORMED OF THREE THREADS, ONE (54,56) OF WHICH CARRIES A GATE INSULATOR LAYER AND A SEMICONDUCTOR LAYER AND THE OTHER TWO (58,60) OF WHICH ARE ELECTRICALLY CONDUCTIVE AND SERVE AS THE SOURCE AND DRAIN. THE SUBSTRATES OR THREADS ARE PREFERABLY FLEXIBLE AND CAN BE FORMED IN A FABRIC.FIGURE 1

    9.
    发明专利
    未知

    公开(公告)号：DE10006257B8

    公开(公告)日：2006-12-14

    申请号：DE10006257

    申请日：2000-02-11

    Applicant: IBM

    Inventor： CHONDROUDIS KONSTANTINOS ,  DIMITRAKOPOULOS CHRISTOS D ,  KAGAN CHERIE R ,  KYMISSIS IOANNIS

    IPC: H01L27/12 ,  H01L51/05 ,  H01L21/02 ,  H01L27/088 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/30

    Abstract: An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an organic material. The inorganic component forms an extended, inorganic one-, two-, or three-dimensional network to provide the high carrier mobilities characteristic of inorganic, crystalline solids. The organic component facilitates the self-assembly of these materials and enables the materials to be deposited by simple, low temperature processing conditions such as spin-coating, dip-coating, or thermal evaporation. The organic component is also used to tailor the electronic properties of the inorganic framework by defining the dimensionality of the inorganic component and the electronic coupling between inorganic units.

    10.
    发明专利
    未知

    公开(公告)号：DE10006257B4

    公开(公告)日：2006-06-29

    申请号：DE10006257

    申请日：2000-02-11

    Applicant: IBM

    Inventor： CHONDROUDIS KONSTANTINOS ,  DIMITRAKOPOULOS CHRISTOS D ,  KAGAN CHERIE R ,  KYMISSIS IOANNIS

    IPC: H01L27/12 ,  H01L51/05 ,  H01L21/02 ,  H01L27/088 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/30

    Abstract: An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an organic material. The inorganic component forms an extended, inorganic one-, two-, or three-dimensional network to provide the high carrier mobilities characteristic of inorganic, crystalline solids. The organic component facilitates the self-assembly of these materials and enables the materials to be deposited by simple, low temperature processing conditions such as spin-coating, dip-coating, or thermal evaporation. The organic component is also used to tailor the electronic properties of the inorganic framework by defining the dimensionality of the inorganic component and the electronic coupling between inorganic units.

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