公开(公告)号：AT534139T

公开(公告)日：2011-12-15

申请号：AT09781028

申请日：2009-07-24

Applicant: IBM

Inventor： SCHWARZ KLAUS ,  MADAN ANITA ,  LIU XIAO ,  LAI CHUNG WOH ,  SCOTT JOHN

IPC: H01L21/268 ,  H01L21/322 ,  H01L29/10

Abstract: A system for manipulating dislocations on semiconductor devices, includes a moveable laser configured to generate a laser beam locally on a surface portion of the semiconductor body having a plurality of dislocations, the moveable laser being characterized as having a scan speed, the moveable laser manipulates the plurality of dislocations on the surface portion of the semiconductor body by adjusting the temperature and the scan speed of the laser beam.

公开(公告)号：SG132629A1

公开(公告)日：2007-06-28

申请号：SG2006079735

申请日：2006-11-16

Applicant: IBM ,  CHARTERED SEMICONDUCTOR MFG

Inventor： GREENE BRIAN JOSEPH ,  TEH YOUNG WAY ,  RIM KERN ,  LIN WENHE ,  PANDA SIDDHARTHA ,  LAI CHUNG WOH ,  LEE YONG MENG

Abstract: A method (and apparatus) of post silicide spacer removal includes preventing damage to the silicide spacer through the use of at least one of an oxide layer (201) and a nitride layer (202).