公开(公告)号：DE69323270T2

公开(公告)日：1999-08-12

申请号：DE69323270

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE ,  REDMOND TIMOTHY ALVIDA ,  TSANG YUK LUN ,  VAN HORN JOSEPH JOHN ,  VIEHBECK ALFRED ,  WALKER GEORGE FREDERICK ,  YANG JER-MING ,  LONG CLARENCE SANFORD

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：ES2126621T3

公开(公告)日：1999-04-01

申请号：ES93116795

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：DE69323270D1

公开(公告)日：1999-03-11

申请号：DE69323270

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE ,  REDMOND TIMOTHY ALVIDA ,  TSANG YUK LUN ,  VAN HORN JOSEPH JOHN ,  VIEHBECK ALFRED ,  WALKER GEORGE FREDERICK ,  YANG JER-MING ,  LONG CLARENCE SANFORD

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：AT176333T

公开(公告)日：1999-02-15

申请号：AT93116795

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE ,  REDMOND TIMOTHY ALVIDA ,  TSANG YUK LUN ,  VAN HORN JOSEPH JOHN ,  VIEHBECK ALFRED ,  WALKER GEORGE FREDERICK ,  YANG JER-MING ,  LONG CLARENCE SANFORD

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.