公开(公告)号：DE69323270T2

公开(公告)日：1999-08-12

申请号：DE69323270

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE ,  REDMOND TIMOTHY ALVIDA ,  TSANG YUK LUN ,  VAN HORN JOSEPH JOHN ,  VIEHBECK ALFRED ,  WALKER GEORGE FREDERICK ,  YANG JER-MING ,  LONG CLARENCE SANFORD

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：CA1267378A

公开(公告)日：1990-04-03

申请号：CA495093

申请日：1985-11-12

Applicant: IBM

Inventor： CHIONG KAOLIN N ,  CHOW MING-FEA ,  YANG JER-MING

IPC: G03F7/36 ,  G03C1/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26

Abstract: FI9-64-046 TOP IMAGED PLASMA DEVELOPABLE RESISTS The present invention is concerned with a method of converting the upper portion of a layer of polymeric resist into a dry etch resistant form. Oxygen plasma can then be used to develop the entire resist structure. The layer of polymeric resist is exposed to patterned radiation which creates labile and reactive hydrogens within the resist by molecular rearrangement. The reactive hydrogens within the upper portion of the layer are subsequently reacted with a silylating reagent to form a dry etch resistant compound. When the polymeric resist material is highly absorbent of the radiation, the reactive hydrogens are created only in the upper portion of the layer; when the polymeric resist material is more transparent, the formation of the dry etch resistant upper portion must be controlled via the degree of penetration of the silylating reagent into the layer.

公开(公告)号：CA2098416A1

公开(公告)日：1994-04-28

申请号：CA2098416

申请日：1993-06-15

Applicant: IBM

Inventor： FREIERMUTH PETER E ,  GINN KATHLEEN S ,  HALEY JEFFREY A ,  LAMAIRE SUSAN J ,  LEWIS DAVID A ,  MILLS GAVIN T ,  REDMOND TIMOTHY A ,  TSANG YUK L ,  VAN HORN JOSEPH J ,  VIEHBECK ALFRED ,  WALKER GEORGE F ,  YANG JER-MING ,  LONG CLARENCE S

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/306 ,  H01L21/31 ,  H01L21/477 ,  H01L21/479 ,  H01L21/70

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：DE3689179D1

公开(公告)日：1993-11-25

申请号：DE3689179

申请日：1986-05-27

Applicant: IBM

Inventor： CHIONG KAOLIN ,  YANG BEA-JANE LIN ,  YANG JER-MING

IPC: H01L21/302 ,  G03F7/26 ,  H01L21/3065

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

公开(公告)号：DE3689179T2

公开(公告)日：1994-05-05

申请号：DE3689179

申请日：1986-05-27

Applicant: IBM

Inventor： CHIONG KAOLIN ,  YANG BEA-JANE LIN ,  YANG JER-MING

IPC: H01L21/302 ,  G03F7/26 ,  H01L21/3065

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

公开(公告)号：DE3585436D1

公开(公告)日：1992-04-02

申请号：DE3585436

申请日：1985-12-03

Applicant: IBM

Inventor： CHIONG KAOLIN ,  CHOW MING-FEA ,  YANG JER-MING

IPC: G03F7/36 ,  G03C1/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/40

公开(公告)号：DE3751127T2

公开(公告)日：1995-09-14

申请号：DE3751127

申请日：1987-04-28

Applicant: IBM

Inventor： GRECO STEPHEN EDWARD ,  LYONS CHRISTOPHER FRANCIS ,  YANG JER-MING

IPC: H01L21/30 ,  C08J9/26 ,  G03C1/00 ,  G03F7/004 ,  G03F7/26 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027

公开(公告)号：DE3773061D1

公开(公告)日：1991-10-24

申请号：DE3773061

申请日：1987-06-26

Applicant: IBM

Inventor： ALLEN ROBERT DAVID ,  CHIONG KAOLIN N ,  CHOW MING-FEA ,  MACDONALD SCOTT ARTHUR ,  YANG JER-MING ,  WILLSON CARLTON GRANT

IPC: H01L21/027 ,  G03F7/038 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38

Abstract: The present invention is concerned with a method of converting a single resist layer into a multilayered resist. The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

公开(公告)号：DE69323270D1

公开(公告)日：1999-03-11

申请号：DE69323270

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE ,  REDMOND TIMOTHY ALVIDA ,  TSANG YUK LUN ,  VAN HORN JOSEPH JOHN ,  VIEHBECK ALFRED ,  WALKER GEORGE FREDERICK ,  YANG JER-MING ,  LONG CLARENCE SANFORD

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：AT176333T

公开(公告)日：1999-02-15

申请号：AT93116795

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE ,  REDMOND TIMOTHY ALVIDA ,  TSANG YUK LUN ,  VAN HORN JOSEPH JOHN ,  VIEHBECK ALFRED ,  WALKER GEORGE FREDERICK ,  YANG JER-MING ,  LONG CLARENCE SANFORD

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.