公开(公告)号：EP0814544A2

公开(公告)日：1997-12-29

申请号：EP97109746

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/028 ,  H01S3/025

CPC classification number: H01S5/028

Abstract: A semiconductor laser diode (30), comprising a waveguide being terminated by a back facet (34) and a front facet (33). These facets (33, 34) comprise a front facet coating (31B) and a back facet coating (21A) having a reflectivity providing for controlled decoupling of light at said front facet (33) from the standing lightwave in said waveguide. The front facet coating (31B) comprises a stack of layers providing for a phase shift of the standing lightwave within said waveguide such that the intensity of the lightwave at said front facet (33), where light it is decoupled from said standing lightwave, has a relative minimum.

Abstract translation: 一种半导体激光二极管（30），包括由后面（34）和前刻面（33）端接的波导。 这些小平面（33,34）包括前小面涂层（31B）和后面涂层（21A），后面涂层（21A）具有反射率，提供所述前刻面（33）处的光与所述波导中的驻波光线的受控去耦。 前面小面涂层（31B）包括一叠层，用于使所述波导管内的立体光波相移，使得所述前刻面（33）处的光线与所述直立光波分离的光波强度具有 相对最小。

公开(公告)号：JPH1056234A

公开(公告)日：1998-02-24

申请号：JP16551997

申请日：1997-06-23

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  GASSER MARCEL ,  JAKUBOWICZ ABRAM ,  LATTA ERNST-EBERHARD ,  ROENTGEN PETER

IPC: H01S5/00 ,  H01S5/028 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a reliable semiconductor laser diode, in which a catastrophic optical mirror damage(COMD) is reduced and deterioration behavior is significantly improved, and its manufacturing method. SOLUTION: In a semiconductor laser diode 30 containing a waveguide which ends at a rear end surface 34 and a front end surface 33, these end surfaces contain a rear end surface coating 21A and a front end surface coating 31B having reflectance which causes controlled decoupling from the standing light wave of the light in the front end surface 33 in the waveguide. The front end surface coating 31B contains a stack of layers which causes phase shift of the standing light wave in the waveguide so that intensity of the light wave in the front end surface 33 where the light is decoupled from the standing light wave has a minimum value.

公开(公告)号：DE69714815T2

公开(公告)日：2003-04-30

申请号：DE69714815

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/00 ,  H01S5/028 ,  H01S5/02

Abstract: A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

公开(公告)号：DE69714815T8

公开(公告)日：2007-10-11

申请号：DE69714815

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/028

Abstract: A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

公开(公告)号：DE69714815D1

公开(公告)日：2002-09-26

申请号：DE69714815

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/00 ,  H01S5/028 ,  H01S5/02

Abstract: A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

公开(公告)号：DE3585842D1

公开(公告)日：1992-05-21

申请号：DE3585842

申请日：1985-05-07

Applicant: IBM

Inventor： LATTA ERNST-EBERHARD ,  RONAY MARIA

IPC: C01G33/00 ,  B01J23/00 ,  B01J23/10 ,  C01B13/14 ,  C01B13/32 ,  C01G1/00 ,  C23C8/10 ,  C23C8/12 ,  H01L21/316 ,  H01L39/24

Abstract: One or more monolayers of cerium arrayed on the surface of a niobium metal acts as a catalyst to oxidation of the niobium at ambient temperature and results in a very thin, very high quality insulating layer which may be configured by patterning of the catalyst. Significant amounts of Nb 2 0 5 are formed at pressures as low as 6.6x 10 -6 Pa, promoted by thepresence of the cerium. This catalytic activity is related to the trivalent to tetravalent valence change of the cerium during oxidation. The kinestics of Nb 2 0 5 formation beneath the oxidation cerium shows two stages:the first stage is fast growth limited by ion diffusion;the second stage is slow growth limited by electron tunnelling.Other catalytic rare earths usable instead of cerium are terbium and praseodymium; other substrate materials usable instead of niobium are aluminium, hafnium, silicon and tantalum, or oxidizable alloys thereof.