公开(公告)号：US3887362A

公开(公告)日：1975-06-03

申请号：US31621272

申请日：1972-12-18

Applicant: IBM

Inventor： RONAY MARIA

IPC: C22C38/00 ,  C22C38/12 ,  C22C38/14 ,  C23C8/26 ,  C22C37/00 ,  C22C39/00

CPC classification number: C22C38/12 ,  C22C38/14

Abstract: There are disclosed herein novel nitridable steels which can be utilized to form parts by severe cold forming processes and thereafter the so-formed parts can be hardened to a high surface hardness by nitriding. The steels are alloys which contain 0.005 - 0.03 weight percent of carbon and at least one element selected from the group consisting of titanium in a weight percent of 0.2 to 3.0, zirconium in a weight percent of 0.1 to 1.0, hafnium in a weight percent of 0.1 to 1.0, vanadium in a weight percent of 0.2 to 3.0, niobium in a weight percent of 0.2 to 3.0 and tantalum in a weight percent of 0.1 to 1.0, or aluminum in a weight percent of 0 to 2.0 alone or in combination with elements of the aforementioned group. In addition, these steels may also contain nickel in a weight percent of 0 to 15.0, silicon in a weight percent of 0 to 4.0 and manganese in a weight percent of 0 to 1.5. The balance of the alloys is iron.

Abstract translation: 这里公开了可用于通过严格的冷成型方法形成部件的新型可氮化钢，然后通过氮化将所形成的部件硬化至高表面硬度。 钢是含有0.005-0.03重量％的碳和至少一种选自重量百分比为0.2到3.0的钛，重量百分比为0.1到1.0的锆，以重量百分比计的铪， 0.1至1.0，重量百分比为0.2至3.0的钒，重量百分比为0.2至3.0的铌，重量百分比为0.1至1.0的钽，或重量百分比为0至2.0的铝或与元素组合 的上述组。 此外，这些钢还可以含有重量百分比为0至15.0的镍，重量百分比为0至4.0的硅和重量百分比为0至1.5的锰。 合金的余量为铁。

公开(公告)号：JPH10168431A

公开(公告)日：1998-06-23

申请号：JP31509397

申请日：1997-11-17

Applicant: IBM

Inventor： RONAY MARIA

IPC: B24B37/00 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To obtain a polishing slurry which can polish projected parts (flat parts) at a greatly higher rate than concave parts (dents) and thus enables a remarkably high flatness to be obtd. by incorporating abrasive particles and a polyelectrolyte into the same. SOLUTION: This water-base polishing slurry, exhibiting normal stress effects, contains abrasive particles having particle sizes of about 30-200nm and selected from among alumina, ceria, silica, and zirconia and about 5-50wt.% (based on the abrasive) polyelectrolyte or polyampholyte having a mol.wt. of 500-10,000 and acidic or basic groups having an ionic charge different from the charge relating to the abrasive particles. Polyethyleneimine, polyacrylic acid, polymethacrylic acid, and polymaleic acid are pref. polyelectrolytes. A surface to be polished is flattened by supplying the slurry onto the surface and bringing the surface into contact with a polishing pad (pref. a rigid one).

公开(公告)号：JPH1074764A

公开(公告)日：1998-03-17

申请号：JP18149197

申请日：1997-07-07

Applicant: IBM

Inventor： RONAY MARIA

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/768 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To enable a conductive line formed in a patterned insulator layer to be improved in thickness uniformity. SOLUTION: First, a thin (50 to 500Å) metal layer 142 of Vb metal, preferably niobium is formed on a patterned insulator layer 140. Then, a layer 148 of Al or Al, alloy is formed on the thin niobium layer. The aluminum layer 148 is subjected to chemical and mechanical polishing with oxide acid colloidal alumina slurry to make a niobium liner 142 exposed and oxidized. The niobium liner 142 functions as a polishing stop layer. Then, the exposed thin niobium liner 142 is removed by chemical and mechanical polishing. Or a thin layer of Vb metal or its alloy in place of niobium can be made to serve as a liner.

公开(公告)号：JP2005136412A

公开(公告)日：2005-05-26

申请号：JP2004312045

申请日：2004-10-27

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： RONAY MARIA

IPC: C22C5/06 ,  C22F1/14 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/525

CPC classification number: H01L23/53247 ,  C22C5/06 ,  C22F1/14 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76864 ,  H01L21/76888 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a self-sealing silver alloy for interconnection. SOLUTION: An alloy of silver and an alloying metal, such as beryllium which can diffuse over the surface of a high conductivity metal and can be oxidized so as to form an alloy element oxide, is provided, along with an electronic circuit structure which employs the alloy and an alloy formation method. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供用于互连的自密封银合金。 解决方案：提供银和合金金属合金，例如铍，其可以在高导电性金属的表面上扩散并且可以被氧化以形成合金元素氧化物，以及电子电路结构 其采用合金和合金形成方法。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2000079356A

公开(公告)日：2000-03-21

申请号：JP15512799

申请日：1999-06-02

Applicant: IBM ,  TOSHIBA CORP

Inventor： MATSUDA TETSURO ,  RONAY MARIA

IPC: B05B1/14 ,  C12N9/12 ,  C12Q1/48 ,  G01N33/68 ,  H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To realize the formation of a thin film wherein the waste of a film material is omitted to enhance utilization efficiency in forming the thin film on a semiconductor substrate and the irregularity of the thickness of the formed film is not determined by the pattern on a semiconductor wafer. SOLUTION: A liquid material ejected from a nozzle is supplied to the surface of a semiconductor substrate by using an ink jet mechanism consisting of a liquid material housing part 12, a drive part 14 and a nozzle part. By supplying the film material (liquid material) by an ink jet system, the film material can be supplied only to a desired part of the semiconductor substrate and the supply thereof to an unnecessary part is prevented and the irregularity of film thickness is prevented from depending on the pattern on a semiconductor wafer.

公开(公告)号：DE69935291T2

公开(公告)日：2007-11-22

申请号：DE69935291

申请日：1999-07-30

Applicant: SIEMENS AG ,  IBM

Inventor： BOGGS KARL E ,  LIN CHENTING ,  NEUTZEL JOACHIM F ,  PLOESSL ROBERT ,  RONAY MARIA ,  SCHNABEL FLORIAN ,  STEPHENS JEREMY K

IPC: H01L21/304 ,  H01L21/3105 ,  B24B37/013 ,  B24B49/12 ,  H01L21/306 ,  H01L21/66 ,  H01L23/544

Abstract: The method of polishing metal layers on wafers comprises the steps of: using a chemical-mechanical polisher (50) to polish the metal layers (32) to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas (80), and adjusting the operation of the chemical-mechanical polisher (50) in response to the inspection of the indicator areas (80). The indicator areas (80) may include macroblocks comprised of a multitude of individual blocks (82). The wafer may be inspected by optically identifying the polishing state of the blocks (82) in the macroblock (80). Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.

公开(公告)号：DE3585842D1

公开(公告)日：1992-05-21

申请号：DE3585842

申请日：1985-05-07

Applicant: IBM

Inventor： LATTA ERNST-EBERHARD ,  RONAY MARIA

IPC: C01G33/00 ,  B01J23/00 ,  B01J23/10 ,  C01B13/14 ,  C01B13/32 ,  C01G1/00 ,  C23C8/10 ,  C23C8/12 ,  H01L21/316 ,  H01L39/24

Abstract: One or more monolayers of cerium arrayed on the surface of a niobium metal acts as a catalyst to oxidation of the niobium at ambient temperature and results in a very thin, very high quality insulating layer which may be configured by patterning of the catalyst. Significant amounts of Nb 2 0 5 are formed at pressures as low as 6.6x 10 -6 Pa, promoted by thepresence of the cerium. This catalytic activity is related to the trivalent to tetravalent valence change of the cerium during oxidation. The kinestics of Nb 2 0 5 formation beneath the oxidation cerium shows two stages:the first stage is fast growth limited by ion diffusion;the second stage is slow growth limited by electron tunnelling.Other catalytic rare earths usable instead of cerium are terbium and praseodymium; other substrate materials usable instead of niobium are aluminium, hafnium, silicon and tantalum, or oxidizable alloys thereof.

公开(公告)号：DE69935291D1

公开(公告)日：2007-04-12

申请号：DE69935291

申请日：1999-07-30

Applicant: SIEMENS AG ,  IBM

Inventor： BOGGS KARL E ,  LIN CHENTING ,  NEUTZEL JOACHIM F ,  PLOESSL ROBERT ,  RONAY MARIA ,  SCHNABEL FLORIAN ,  STEPHENS JEREMY K

IPC: H01L21/304 ,  H01L21/3105 ,  B24B37/013 ,  B24B49/12 ,  H01L21/306 ,  H01L21/66 ,  H01L23/544

Abstract: The method of polishing metal layers on wafers comprises the steps of: using a chemical-mechanical polisher (50) to polish the metal layers (32) to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas (80), and adjusting the operation of the chemical-mechanical polisher (50) in response to the inspection of the indicator areas (80). The indicator areas (80) may include macroblocks comprised of a multitude of individual blocks (82). The wafer may be inspected by optically identifying the polishing state of the blocks (82) in the macroblock (80). Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.

公开(公告)号：SG55246A1

公开(公告)日：1998-12-21

申请号：SG1996011344

申请日：1996-11-18

Applicant: IBM

Inventor： RONAY MARIA

IPC: H01L21/285 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485

Abstract: An integrated circuit chip interconnect wiring level and method of making is described incorporating an adhesion layer M of Ti, Zr, Hf, V, Nb, Ta, W and alloys thereof and a layer of Al-rare-earth or Al-Y alloy. The layers may be heat treated to become one layer. A further layer of AlCu, AlCuSi or AlCuGe alloy may be added and heat treated to form one layer with the layers below. The problems of polishing MAl3 or other M aluminides by reducing their formation, of scratching by reducing the size of the polishing debris, and of Cu plate out during polishing are overcome.

公开(公告)号：DE2361801A1

公开(公告)日：1974-06-20

申请号：DE2361801

申请日：1973-12-12

Applicant: IBM

Inventor： RONAY MARIA

IPC: C22C38/00 ,  C22C38/12 ,  C22C38/14 ,  C23C8/26 ,  C22C39/40

Abstract: There are disclosed herein novel nitridable steels which can be utilized to form parts by severe cold forming processes and thereafter the so-formed parts can be hardened to a high surface hardness by nitriding. The steels are alloys which contain 0.005 - 0.03 weight percent of carbon and at least one element selected from the group consisting of titanium in a weight percent of 0.2 to 3.0, zirconium in a weight percent of 0.1 to 1.0, hafnium in a weight percent of 0.1 to 1.0, vanadium in a weight percent of 0.2 to 3.0, niobium in a weight percent of 0.2 to 3.0 and tantalum in a weight percent of 0.1 to 1.0, or aluminum in a weight percent of 0 to 2.0 alone or in combination with elements of the aforementioned group. In addition, these steels may also contain nickel in a weight percent of 0 to 15.0, silicon in a weight percent of 0 to 4.0 and manganese in a weight percent of 0 to 1.5. The balance of the alloys is iron.