公开(公告)号：DE2356975A1

公开(公告)日：1974-07-11

申请号：DE2356975

申请日：1973-11-15

Applicant: IBM

Inventor： LEHMAN HERBERT SAUL ,  PLISKIN WILLIAM AARON ,  VROMEN BENJAMIN HERBERT

IPC: H01L29/78 ,  H01L21/316 ,  H01L29/00 ,  H01L11/14

公开(公告)号：DE2509174A1

公开(公告)日：1975-09-25

申请号：DE2509174

申请日：1975-03-03

Applicant: IBM

Inventor： LEHMAN HERBERT SAUL

IPC: H01L21/76 ,  H01L21/027 ,  H01L21/316 ,  H01L21/318 ,  H01L21/32 ,  H01L21/331 ,  H01L21/762 ,  H01L23/29 ,  H01L29/73 ,  H01L27/04

Abstract: An oxidation resistant masking layer for a semiconductor body having a first layer of oxygenated silicon nitride material having a refractive index in the range of 1.60 to 1.85, and a second overlying layer of Si3N4 bonded to the first layer having a thickness of at least 100 Angstroms.