Abstract:
A method is disclosed for locating a particular small objects (down to submicron) within an array of periodically arranged like objects utilizing a scanning tool. The method includes scanning the array for generating a plurality of pulses, which correspond to these objects contained within the array. Counting the plurality of pulses in order to locate the particular object within the array.
Abstract:
PROBLEM TO BE SOLVED: To locate a microobject in a periodically arranged array precisely and inexpensively by generating pulses corresponding in number to the submicron objects contained in the array and scanning the object and then counting the pulses. SOLUTION: A pulses 30 generated from a scanner 20 are fed to a pulse processor 22 where the pulse 30 is converted through a filter into a rectangular signal depending on the gradient and height of the pulse so that it can be identified easily by means of a counter 24. In case of a large contaminant particle, the counter 24 is fed with a pulse 22a processed to remove the pulse 30. The counter 24 counts the pulses corresponding in number to the objects encountered by the scanner 20 in the X, Y directions and delivers a count 24a to a comparator 26. The comparator 26 compares the pulse count 24a with a preset number for locating the submicron object thus locating the submicron object in an array 10.
Abstract:
PROBLEM TO BE SOLVED: To easily remove the polymer deposition generated during etching by applying high sputtering component etching to at least a part of a first barrier layer and further low sputtering component etching to at least a part of a metallic treatment layer, respectively. SOLUTION: The high sputtering component etching advantageously increases the sputtering of a photoresist layer, allows additive carbon to exist in an etching reactor and this carbon to be absorbed in the side wall deposition. This deposition is made more soluble by increasing the carbon quantity of the side wall deposition and may be made easily removable during the subsequent photoresist stripping and washing stage. The metal treatment layer is usually substantially thicker than the apex barrier layer of most of the laminates and, therefore, the use of the low sputtering component etching to etch the metal treatment layer in order to lessen photoresist corrosion is recommended.
Abstract:
A method is disclosed for locating a particular small objects (down to submicron) within an array of periodically arranged like objects utilizing a scanning tool. The method includes scanning the array for generating a plurality of pulses, which correspond to these objects contained within the array. Counting the plurality of pulses in order to locate the particular object within the array.
Abstract:
A composite diffusion barrier (26,28) protects copper structure (30) from oxidation in the presence of oxygen or water in an integrated circuit. The copper structure (30) may be a dual damascene conductor with conductor (32) and via portions (34). The composite barrier includes dense diffusion barrier (28), which may be made of tantalum and/or tantalum nitride, and barrier film (26) capable of forming a protective oxide in a self limiting manner in the presence of oxygen or water. Oxidation of barrier film (26) enables in-situ repair of defects such as pinholes in the diffusion barrier (28). The barrier film (26) may contain aluminium, silicon or Cu 3 Ge. The composite barrier (26,28) is situated in a semiconductor device, which includes an insulator layer (20), which may have low dielectric constant k and high permeability. The device may also have nitride cap (38).
Abstract:
A method is disclosed for locating a particular small objects (down to submicron) within an array of periodically arranged like objects utilizing a scanning tool. The method includes scanning the array for generating a plurality of pulses, which correspond to these objects contained within the array. Counting the plurality of pulses in order to locate the particular object within the array.