METHOD AND EQUIPMENT FOR LOCATING SPECIFIC OBJECT OF SUBMICRON

    公开(公告)号:JPH109843A

    公开(公告)日:1998-01-16

    申请号:JP7476497

    申请日:1997-03-27

    Applicant: SIEMENS AG IBM

    Abstract: PROBLEM TO BE SOLVED: To locate a microobject in a periodically arranged array precisely and inexpensively by generating pulses corresponding in number to the submicron objects contained in the array and scanning the object and then counting the pulses. SOLUTION: A pulses 30 generated from a scanner 20 are fed to a pulse processor 22 where the pulse 30 is converted through a filter into a rectangular signal depending on the gradient and height of the pulse so that it can be identified easily by means of a counter 24. In case of a large contaminant particle, the counter 24 is fed with a pulse 22a processed to remove the pulse 30. The counter 24 counts the pulses corresponding in number to the objects encountered by the scanner 20 in the X, Y directions and delivers a count 24a to a comparator 26. The comparator 26 compares the pulse count 24a with a preset number for locating the submicron object thus locating the submicron object in an array 10.

    Composite diffusion barrier for protecting copper interconnects in low dielectric constant materials from oxidation

    公开(公告)号:GB2365215A

    公开(公告)日:2002-02-13

    申请号:GB0101254

    申请日:2001-01-18

    Applicant: IBM

    Abstract: A composite diffusion barrier (26,28) protects copper structure (30) from oxidation in the presence of oxygen or water in an integrated circuit. The copper structure (30) may be a dual damascene conductor with conductor (32) and via portions (34). The composite barrier includes dense diffusion barrier (28), which may be made of tantalum and/or tantalum nitride, and barrier film (26) capable of forming a protective oxide in a self limiting manner in the presence of oxygen or water. Oxidation of barrier film (26) enables in-situ repair of defects such as pinholes in the diffusion barrier (28). The barrier film (26) may contain aluminium, silicon or Cu 3 Ge. The composite barrier (26,28) is situated in a semiconductor device, which includes an insulator layer (20), which may have low dielectric constant k and high permeability. The device may also have nitride cap (38).

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