Electroluminescent device
    1.
    发明专利

    公开(公告)号:GB1080627A

    公开(公告)日:1967-08-23

    申请号:GB4368164

    申请日:1964-10-27

    Applicant: IBM

    Abstract: A light-emitting device comprises an NPP zone structure in which the outer P region is doped with shallow level acceptors while the central zone contains deep level acceptors and is of higher resistivity than either outer zone. A typical device, Fig. 8, with a built-in injection luminescent diode is made by diffusing manganese, cobalt or chromium into a selenium, tellurium or silicon doped N-type gallium arsenide wafer. If one face of the wafer is not masked during the diffusion the P layer formed thereon is removed. The same result is more economically achieved by cutting the wafer in half. Zinc, cadmium or magnesium is then diffused into the wafer to a lesser depth to form P zones on both faces, the wafer diced and ohmic contacts made as shown to individual elements using tin on the N region and indium on the P zones. A reflective coating 56 directs light from diode 16-50 on to radiation sensitive element 12, 14, 16. Another embodiment is similar but lacks P region 50. In this case a separate radiation source is used and the device used as a light amplifier or, if the photons from the source are less energetic than those generated by the diode, as a quartum converter. The diode is made as described above except that the second P zone is removed or its formation avoided by masking, and may have a dichroic filter on its N surface to reflect back radiation generated within while admitting longer wavelength radiation from the source. In the Fig. 7 circuit, not shown, the incident radiation is chopped at a frequency less than that of the alternating voltage fed to the diode. A matrix of diodes may be used as an infra-red image converter or, if a gallium phosphide-arsenide alloy is used for the body to make infra-red images visible.

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