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    1.
    发明专利
    未知

    公开(公告)号：DE2416147A1

    公开(公告)日：1974-10-24

    申请号：DE2416147

    申请日：1974-04-03

    Applicant: IBM

    Inventor： DUMKE WILLIAM PAUL ,  WOODALL JERRY MACPHERSON

    IPC: H01L21/208 ,  H01L33/00 ,  H01S5/00 ,  H01S5/227 ,  H01S3/18

    Abstract: A semiconductor laser device having an enclosed laser cavity is disclosed. The semiconductor laser is of the heterostructure type and embodiments of single and double heterostructures are disclosed. In both of the heterostructure devices disclosed, the side surfaces of the active region are well defined. This is accomplished, in one instance, by surrounding the laser active region on all side surfaces with a higher band gap material which also has a lower index of refraction. Thus, the laser cavity is partially enclosed by a semiconductor material on one conductivity type of a band gap higher than the band gap of the material of the laser cavity. The remaining portion is enclosed by a band gap material higher than the material of the laser cavity but is of opposite conductivity type to the first mentioned higher band gap material. In another instance the side surfaces of the laser active region are partially surrounded by a high band gap material and partially by a region of opposite conductivity type to the active region; both of which regions contribute carriers to the active region. The laser devices disclosed are made, for example, from layers of appropriately doped P and N type gallium arsenide and from layers of P and N type gallium aluminum arsenide. The resulting devices can have very small cavity cross sections, optical and electrical confinement of the excitation at all the side surfaces, low electrical series resistance and a low thermal resistance due to geometrical factors.

    A SEMICONDUCTOR DEVICE
    2.
    发明专利
    A SEMICONDUCTOR DEVICE 未知

    公开(公告)号：DE3380385D1

    公开(公告)日：1989-09-14

    申请号：DE3380385

    申请日：1983-03-15

    Applicant: IBM

    Inventor： DUMKE WILLIAM PAUL ,  WOODALL JERRY MACPHERSON

    IPC: H01L31/10 ,  H01L29/737 ,  H01L31/11 ,  H01L31/18 ,  H01L29/72

    Abstract: A semiconductor processor for signals such as are conveyed by fibre optics wherein the processor structure accommodates lattice mismatch and minimizes the effect of misfit dislocations. The structure permits using materials having favorable absorption properties at the 1 micrometer wavelength of optical signals. A binary semiconductor is employed with graded regions produced by adding a different third ingredient in two places so that a wide band optically transparent emitter with a graded base and graded collector are provided. The ingredients impart a strong absorption in the optical signal wavelength together with superior semiconductor carrier transit time. A structure for a silicon and germanium oxide based optical signal fibre uses a GaAlAs emitter, a base that is graded to Ga 25 In 75 As at the collector and then back to GaAs at the substrate.

    Electroluminescent device
    3.
    发明专利
    Electroluminescent device 未知

    公开(公告)号：GB1080627A

    公开(公告)日：1967-08-23

    申请号：GB4368164

    申请日：1964-10-27

    Applicant: IBM

    Inventor： DUMKE WILLIAM PAUL ,  LEVITT RALPH SIDNEY ,  WEISER KURT

    IPC: H01L21/00 ,  H01L31/153 ,  H01L33/00 ,  H05B33/14

    Abstract: A light-emitting device comprises an NPP zone structure in which the outer P region is doped with shallow level acceptors while the central zone contains deep level acceptors and is of higher resistivity than either outer zone. A typical device, Fig. 8, with a built-in injection luminescent diode is made by diffusing manganese, cobalt or chromium into a selenium, tellurium or silicon doped N-type gallium arsenide wafer. If one face of the wafer is not masked during the diffusion the P layer formed thereon is removed. The same result is more economically achieved by cutting the wafer in half. Zinc, cadmium or magnesium is then diffused into the wafer to a lesser depth to form P zones on both faces, the wafer diced and ohmic contacts made as shown to individual elements using tin on the N region and indium on the P zones. A reflective coating 56 directs light from diode 16-50 on to radiation sensitive element 12, 14, 16. Another embodiment is similar but lacks P region 50. In this case a separate radiation source is used and the device used as a light amplifier or, if the photons from the source are less energetic than those generated by the diode, as a quartum converter. The diode is made as described above except that the second P zone is removed or its formation avoided by masking, and may have a dichroic filter on its N surface to reflect back radiation generated within while admitting longer wavelength radiation from the source. In the Fig. 7 circuit, not shown, the incident radiation is chopped at a frequency less than that of the alternating voltage fed to the diode. A matrix of diodes may be used as an infra-red image converter or, if a gallium phosphide-arsenide alloy is used for the body to make infra-red images visible.

    4.
    发明专利
    未知

    公开(公告)号：DE1183599B

    公开(公告)日：1964-12-17

    申请号：DEJ0024565

    申请日：1963-10-15

    Applicant: IBM

    Inventor： BURNS GERALD ,  DILL FREDERICK HAYER ,  DUMKE WILLIAM PAUL ,  LASHER GORDON JEWETT ,  NATHAN MARSHALL IRA

    IPC: H01S5/024 ,  H01S5/18 ,  H01S5/32

    Abstract: 1,045,478. Semi-conductor lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 14, 1963 [Oct. 15, 1962], No. 40363/63. Heading H1K. [Also in Division H3] Charge carriers are injected into a body of direct band gap material at a rate sufficient to stimulate emission of radiation due to recombination of the carriers. A semi-conductor body consists of GaAs with a PN junction formed by diffusion between zinc and tellurium doped regions. A gold and antimony plated washer is attached to one side of the device and an indium contact is applied to the other side. The device is operated at low temperatures, e.g. 25‹ K or 77‹ K. Details of many such devices, and their performance, are given in the Specification, together with several modifications. In one device, cadmium replaces zinc as a dopant, a nickel washer soldered with tin being used as one contact, and an InGaAs alloy as the other. A second device uses a gold-plated MoHg washer as one contact and tin or evaporated gold as the other. A further device is undoped on one side of the junction. Other suitable semi-conductor materials include GaSb, InSb, InP, InAs and GaAs-GaP alloys. Charge carrier injection may be achieved by using a magnetic rectifier structure or a semi-conductor-metal junction instead of a PN junction.

    TRANSISTOR WITH TUNNEL EMITTER AND UPPER ENERGY VALLEY BASE
    7.
    发明专利
    TRANSISTOR WITH TUNNEL EMITTER AND UPPER ENERGY VALLEY BASE 未知

    公开(公告)号：DE3262514D1

    公开(公告)日：1985-04-18

    申请号：DE3262514

    申请日：1982-03-18

    Applicant: IBM

    Inventor： DUMKE WILLIAM PAUL ,  FOWLER ALAN BICKSLER

    IPC: H01L29/73 ,  H01L21/331 ,  H01L29/205 ,  H01L29/267 ,  H01L29/68 ,  H01L29/76 ,  H01L29/72 ,  H01L29/08

    Abstract: In a transistor capable of operation at very high speed, the emitter comprises an outer region (8) having a normal energy level for charge carriers of the higher mobility type (electrons) and an inner region (9) providing a barrier having a height greater than the aforesaid normal energy level and being sufficiently thin to permit the higher mobility charge carriers to quantum mechanical tunnel therethrough. The base (3) has an upper energy valley for the injected charge carriers substantially at the aforementioned normal energy level in the outer region of the emitter and is sufficiently thin to permit rapid transport therethrough of the injected charge carriers. The collector comprises an inner region (12) providing a barrier having a height at least as high as the upper energy valley in the base and an outer region (13) having a normal energy level for the injected charge carriers lower than the normal energy level for those charge carriers in the outer region (8) of the emitter. Because the injected charge carriers cross the base in an upper energy valley, the probability of energy loss is reduced. The switching time of the transistor is of the order of 10 seconds.

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