公开(公告)号：US3706597A

公开(公告)日：1972-12-19

申请号：US3706597D

申请日：1970-11-23

Applicant: IBM

Inventor： LI PEI-CHING ,  TSANG PAUL J

IPC: C23C16/40 ,  H01L21/316 ,  C23C11/08

CPC classification number: C23C16/401 ,  H01L21/31604

Abstract: A PROCESS FOR VAPOR DEPOSITION OF GLASS FILMS ON SEMICONDUCTOR MATERIALS WHICH COMPRISES HEATING THE SEMICONDUCTOR MATERIAL IN AN ATMOSPHERE MIXTURE OF ORGANO SILICON, ORGANO LEAD, OXYGEN AND NITROGEN.

公开(公告)号：CA1260334A

公开(公告)日：1989-09-26

申请号：CA500419

申请日：1986-01-27

Applicant: IBM

Inventor： MACKINNON DONALD A ,  LI PEI-CHING ,  SCHICK HENRY C

IPC: C23C16/34 ,  C23C8/36 ,  C23C16/02 ,  C23C28/00 ,  C23C28/04 ,  B05D3/06 ,  C23C16/50

Abstract: FI9-84-044 SURFACE TREATMENT OF A MOLYBDENUM SCREENING MASK Disclosed is a method of treating the surface of a molybdenum mask used for screening a metallized paste pattern to render it smooth and preserve the mask's hardness. The treatment consists of subjecting the mask to a nitridation step by which an ultrathin layer of molybdenum layer is first formed, followed by deposition of a comparatively thick silicon nitride layer thereon. The nitridation step may be accomplished in a plasma deposition system using either forming gas, ammonia or gas mixture of nitrogen and ammonia at a predetermined low temperature and pressure. The silicon nitride deposition may be accomplished in the same system at the same temperature and pressure by substituting the gas utilized to form the molybdenum nitride with a gaseous mixture of silane and one of nitrogen and ammonia.

公开(公告)号：CA1096136A

公开(公告)日：1981-02-24

申请号：CA297675

申请日：1978-02-24

Applicant: IBM

Inventor： LI PEI-CHING

IPC: H01L29/73 ,  C23C16/30 ,  H01L21/205 ,  H01L21/225 ,  H01L21/28 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  H01L21/331 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  B05D5/12 ,  C01B25/12

Abstract: A composition is described which comprises amorphous phosphorusnitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400-900.degree.C with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.

公开(公告)号：DE2807475A1

公开(公告)日：1978-09-07

申请号：DE2807475

申请日：1978-02-22

Applicant: IBM

Inventor： LI PEI-CHING

IPC: H01L29/73 ,  C23C16/30 ,  H01L21/205 ,  H01L21/225 ,  H01L21/28 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  H01L21/331 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  B01J17/32 ,  B01J17/30 ,  B01J17/28 ,  H01L29/78

Abstract: A method is described which forms amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400 DEG -900 DEG C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.

公开(公告)号：AU3252978A

公开(公告)日：1979-07-26

申请号：AU3252978

申请日：1978-01-18

Applicant: IBM

Inventor： LI PEI-CHING

IPC: H01L29/73 ,  C23C16/30 ,  H01L21/205 ,  H01L21/225 ,  H01L21/28 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  H01L21/331 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  B05D3/04 ,  B05D5/12 ,  B05D7/24 ,  H01L21/471 ,  H01L21/68 ,  H01L29/94 ,  H01L29/76 ,  H01B3/12

Abstract: A method is described which forms amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400 DEG -900 DEG C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.

公开(公告)号：FR2381563A1

公开(公告)日：1978-09-22

申请号：FR7802445

申请日：1978-01-20

Applicant: IBM

Inventor： LI PEI-CHING

IPC: C23C16/30 ,  H01L21/205 ,  H01L29/73 ,  H01L21/225 ,  H01L21/28 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  H01L21/331 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  B01J17/26 ,  H01L27/02

Abstract: A method is described which forms amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400 DEG -900 DEG C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.