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公开(公告)号:US3400358A
公开(公告)日:1968-09-03
申请号:US50012765
申请日:1965-10-21
Applicant: IBM
Inventor: BYRNES HERBERT P , GAGLIANO LOUIS J , SCHICK HENRY C
CPC classification number: H01R13/33 , H05K3/308 , H05K3/368 , H05K2201/096 , H05K2201/1059 , H05K2201/10856 , Y10T29/4989
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公开(公告)号:US3611557A
公开(公告)日:1971-10-12
申请号:US3611557D
申请日:1969-04-02
Applicant: IBM
Inventor: HARDARDT ALFRED T , SCHICK HENRY C , WESTERMANN JOHN H
CPC classification number: G11B5/295 , G11B5/29 , Y10T29/49059
Abstract: A LAMINAR-LIKE MODULE FOR USE IN PRODUCING A MULTIPLE MAGNETIC TRANSDUCING HEAD IS DISCLOSED, TOGETHER WITH A METHOD OF FABRICATING THE MODULE. A PLURALITY OF SEPARATE COMPONENTS ARE PLACED IN STACKED RELATIONSHIP IN A FIXTURE, WITH INTERVENING HEAT-ACTIVATABLE ADHESIVE SHEETS. THE WORKING GAP BETWEEN THE MAGNETIC CORES IS SET, TRANSVERSE RELATIVE MOVEMENT BETWEEN THE CORES IS PREVENTED, THE COIL LEADS ARE ATTACHED TO EXPOSED PADS ON CONNECTOR PINS, AND VARIOUS TESTS PERFORMED ON THE MODULE PRIOR TO FINAL ASSEMBLY. IF THE TESTS ARE SUCCESSFUL, THE COMPONENTS ARE FASTENED TOGETHER BY ACTIVATING THE ADHESIVE.
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公开(公告)号:US3346950A
公开(公告)日:1967-10-17
申请号:US46446765
申请日:1965-06-16
Applicant: IBM
Inventor: SCHICK HENRY C
CPC classification number: H01L21/4846 , H01L23/5384 , H01L2924/0002 , H05K1/0289 , H05K1/0393 , H05K3/4084 , H05K3/423 , H05K2201/0394 , H05K2201/091 , H05K2201/09509 , H05K2201/09827 , H05K2203/0195 , H05K2203/0221 , H05K2203/1189 , Y10T29/49167 , H01L2924/00
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公开(公告)号:CA1260334A
公开(公告)日:1989-09-26
申请号:CA500419
申请日:1986-01-27
Applicant: IBM
Inventor: MACKINNON DONALD A , LI PEI-CHING , SCHICK HENRY C
Abstract: FI9-84-044 SURFACE TREATMENT OF A MOLYBDENUM SCREENING MASK Disclosed is a method of treating the surface of a molybdenum mask used for screening a metallized paste pattern to render it smooth and preserve the mask's hardness. The treatment consists of subjecting the mask to a nitridation step by which an ultrathin layer of molybdenum layer is first formed, followed by deposition of a comparatively thick silicon nitride layer thereon. The nitridation step may be accomplished in a plasma deposition system using either forming gas, ammonia or gas mixture of nitrogen and ammonia at a predetermined low temperature and pressure. The silicon nitride deposition may be accomplished in the same system at the same temperature and pressure by substituting the gas utilized to form the molybdenum nitride with a gaseous mixture of silane and one of nitrogen and ammonia.
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公开(公告)号:CA1187203A
公开(公告)日:1985-05-14
申请号:CA417821
申请日:1982-12-15
Applicant: IBM
Inventor: NARKEN BERNT , SCHICK HENRY C
IPC: G03F1/00 , H01L21/027 , G03F7/26 , G03F7/02
Abstract: Integrated Circuit Photomask A photomask formed of a transparent dielectric substrate, such as glass and quartz based substrates, having a conductive surface adjacent region, which is patterned with sequential overcoatings of a composite chrome oxide layer and a chrome film. The mask comprises a combination of varied reflectivities to provide proper densities for the opaque areas of the mask.
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