公开(公告)号：JP2004006852A

公开(公告)日：2004-01-08

申请号：JP2003124691

申请日：2003-04-30

Applicant: IBM

Inventor： RESTAINO DARRYL D ,  SIDDIQUI SHAHAB ,  KALTALIOGLU ERDEM ,  BENNETT DELORES ,  LIU C C ,  CHEN HSUEH-CHUNG ,  CHEN TONG-YU ,  YANG GWO-SHII ,  HSIUNG CHIUNG-SHENG

IPC: H01L21/3205 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To reduce via resistance which often occurs at an interface between a liner and the underside of a copper (Cu) layer in a submicron semiconductor integrated circuit using low dielectric constant (low-k) organic ILD materials. SOLUTION: An adhesive catalyst is applied to an upper layer 30, and a silicon dioxide thin film 50 is formed on it by oxidizing the thin film adhesive catalyst before bonding the organic inter-level dielectric substance. In this way, problem is reduced on via resistance in heat cycle of a semiconductor wafer which materializes multilevel metal and organic inter-level dielectric substance. COPYRIGHT: (C)2004,JPO